SSM2030GM Datasheet PDF - Silicon Standard

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SSM2030GM
Silicon Standard

Part Number SSM2030GM
Description N- and P-channel Enhancement-mode Power MOSFET
Page 11 Pages


SSM2030GM datasheet pdf
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SSM2030GM
N- and P-channel Enhancement-mode Power MOSFETs
Simple drive requirement
Lower gate charge
Fast switching characteristics
Pb-free; RoHS compliant.
DESCRIPTION
D2
D2
D1 D2
D1 D1
D1
SO-8
G2
S2G2
G1 S2
S1
S1
G1
N-CH
P-CH
BV DSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The SSM2030GM is in an SO-8 package, which is widely preferred
G1
for commercial and industrial surface mount applications. This device is
suitable for low voltage applications requiring complementary N and P MOSFETs.
D1
G2
S1
20V
30m
6A
-20V
50m
-5A
D2
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VGS
I D @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Rating
N-channel P-channel
20 -20
±8 ±8
+6 -5
+4.8 -4
+20 -20
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
2/10/2005 Rev.2.01
www.SiliconStandard.com
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SSM2030GM
N-channel ELECTRICAL CHARACTERISTICS @ Tj = 25o C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BVDSS/ Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=16V, VGS=0V
VGS=±8V
ID=6A
VDS=10V
VGS=4.5V
VDS=10V
ID=1A
RG=6Ω, VGS=4.5V
RD=10
VGS=0V
VDS=8V
f=1.0MHz
20 -
-V
- 0.037 - V/°C
- - 30 m
- - 45 m
0.5 - 1.2 V
- 18.5 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 9 - nC
- 1.8 - nC
- 4.2 - nC
- - 29 ns
- - 65 ns
- - 60 ns
- - 50 ns
- 300 - pF
- 255 - pF
- 115 - pF
SOURCE-DRAIN DIODE
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25°C, IS=1.7A, VGS=0V
Min. Typ. Max. Units
- - 1.7 A
- - 20 A
- 0.75 1.2 V
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10sec.
2/10/2005 Rev.2.01
www.SiliconStandard.com
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SSM2030GM
P-channel ELECTRICAL CHARACTERISTICS @ Tj = 25o C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
BVDSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.2A
VGS=-2.5V, ID=-1.8A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-2.2A
Drain-Source Leakage Current (Tj=25oC)
VDS=-20V, VGS=0V
Drain-Source Leakage Current (Tj=70oC)
VDS=-16V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= ± 8V
ID=-2.2A
Gate-Source Charge
VDS=-6V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-10V
Rise Time
ID=-2.2A
Turn-off Delay Time
RG=6,VGS=-4.5V
Fall Time
RD=4.5
Input Capacitance
VGS=0V
Output Capacitance
VDS=-15V
Reverse Transfer Capacitance
f=1.0MHz
-20 -
-V
- -0.037 - V/°C
- - 50 m
- - 80 m
-0.5 - -1 V
- 2.5 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 11.5 - nC
- 3.2 - nC
- 1.5 - nC
- - 10 ns
- - 25 ns
- - 50 ns
- - 30 ns
- 940 - pF
- 440 - pF
- 130 - pF
SOURCE-DRAIN DIODE
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )1
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25°C, IS=-1.8A, VGS=0V
Min. Typ. Max. Units
- - -1.8 A
- - -20 A
- -0.75 -1.2 V
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10sec.
2/10/2005 Rev.2.01
www.SiliconStandard.com
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N-channel
25
T C =25 oC
20
15
10
5
V G=4.5V
V G=3.5V
V G=3.0V
V G=2.5V
V G=2.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
SSM2030GM
25
T C =150 oC
20
15
10
5
V G=4.5V
V G=3.5V
V G=3.0V
V G=2.5V
V G=2.0V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
45
Id=6A
T c=25°C
40
35
30
25
20
2345
V GS (V)
Fig 3. On-Resistance vs. Gate Voltage
1.8
I D=6A
1.6 V G =4.5V
1.4
1.2
1.0
0.8
0.6
-50
0 50 100
T j , Junction Temperature ( oC)
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2/10/2005 Rev.2.01
www.SiliconStandard.com
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SSM2030GM N- and P-channel Enhancement-mode Power MOSFET SSM2030GM
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