SSM09N70GP-A Datasheet PDF - Silicon Standard

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SSM09N70GP-A
Silicon Standard

Part Number SSM09N70GP-A
Description N-channel Enhancement-mode Power MOSFET
Page 5 Pages


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SSM09N70GP-A
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
650V
R DS(ON)
0.75
I D 9A
Pb-free; RoHS-compliant TO-220
G
D
S
TO-220 (suffix P)
DESCRIPTION
The SSM09N70GP-A achieves fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for high voltage applications such as AC/DC
converters, SMPS and general off-line switching circuits.
The SSM09N70GP-A is in TO-220 for through-hole
mounting where a small footprint is required on the board,
and/or an external heatsink is to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VGS
ID
IDM
PD
EAS
IAR
EAR
TSTG
TJ
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Single pulse avalanche energy3
Avalanche current
Repetitive avalanche energy
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
Parameter
RΘJC
RΘJA
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj = 25°C, VDD=50V , L=6.8mH , RG=25, IAS= 9A.
9/29/2006 Rev.3.1
www.SiliconStandard.com
Value
650
±30
9
5
40
156
1.25
305
9
9
-55 to 150
-55 to 150
Value
0.8
62
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Units
°C/W
°C/W
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SSM09N70GP-A
ELECTRICAL CHARACTERISTICS (at Tj = 25°C, unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
Static drain-source on-resistance
Test Conditions
VGS=0V, ID= 1mA
Reference to 25°C, ID=1mA
VGS=10V, ID=4.5A
Min. Typ. Max. Units
650 - - V
- 0.6 - V/°C
- - 0.75
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate threshold voltage
Forward transconductance
Drain-source leakage current
Gate-source leakage current
Total gate charge 2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time 2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS=VGS, ID=250uA
VDS=10V, ID=4.5A
VDS=600V, VGS=0V
VDS=480V ,VGS=0V, Tj = 150°C
VGS30V
ID=9A
VDS=480V
VGS=10V
VDS=300V
ID=9A
RG=10, VGS=10V
RD=34
VGS=0V
VDS=25V
f=1.0MHz
2 - 4V
- 4.5 -
S
- - 10 uA
- - 100 uA
- - ±100 nA
- 44 - nC
- 11 - nC
- 12 - nC
- 19 - ns
- 21 - ns
- 56 - ns
- 24 - ns
- 2660 - pF
- 170 - pF
- 10 - pF
Source-Drain Diode
Symbol
VSD
IS
I SM
Parameter
Forward voltage 2
Continuous source current (body diode)
Pulsed source current (body diode)1
Test Conditions
IS= 9A, VGS=0V
VD=VG=0V , VS=1.5V
Min. Typ. Max. Units
- - 1.5 V
- - 9A
- - 40 A
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
9/29/2006 Rev.3.1
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10
T C =25 o C
8
6
10V
6.0V
5.0V
4
4.5V
2
4.0V
V G = 3 .5 V
0
0 3 6 9 12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
10
T C =150 o C
8
6
SSM09N70GP-A
10V
6.0V
5.0V
4.5V
4
4.0V
2
V G = 3 .5 V
0
0 5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =4.5A
V G =10V
2
1
0.8
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS vs. Junction
Temperature
100
0
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
vs. Junction Temperature
5
10
T j = 150 o C
1
T j = 25 o C
4
3
2
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
f
1
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
150
9/29/2006 Rev.3.1
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16
I D =9A
12
V DS =320V
V DS =400V
V DS =480V
8
4
0
0 20 40
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
60
100
10
1
T c =25 o C
Single Pulse
10us
100us
1ms
10ms
100ms
0.1
1
10
100
1000
10000
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
SSM09N70GP-A
f=1.0MHz
10000
C iss
C oss
100
C rss
1
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
10V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
9/29/2006 Rev.3.1
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