SQJ410EP Datasheet PDF - Vishay

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SQJ410EP
Vishay

Part Number SQJ410EP
Description Automotive N-Channel MOSFET
Page 9 Pages


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SQJ410EP
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
PowerPAK® SO-8L Single
30
0.0039
0.0042
32
Single
D
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
6.15 mm
4
G
3
S
2
S
1
S
D
5.13 mm
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SO-8L
SQJ410EP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TJ, Tstg
LIMIT
30
± 20
32
32
32
128
58
168
83
27
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
65
°C/W
RthJC
1.8
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
e. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-1860-Rev. C, 13-Aug-12
1
Document Number: 67003
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



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SQJ410EP
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = 30 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = 10 V
VDS = 30 V, TJ = 125 °C
VDS = 30 V, TJ = 175 °C
VDS5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 10.3 A
ID = 10.3 A, TJ = 125 °C
ID = 10.3 A, TJ = 175 °C
Forward Transconductanceb
Dynamicb
VGS = 4.5 V
ID = 8.7 A
gfs VDS = 15 V, ID = 16 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 15 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VGS = 10 V
VDS = 15 V, ID = 15 A
f = 1 MHz
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Pulsed Currenta
ISM
Forward Voltage
VSD IF = 10 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN. TYP. MAX. UNIT
30 -
-
V
1.5 2.0 2.5
- - ± 100 nA
- -1
- - 50 μA
- - 150
30 -
-A
- 0.0037 0.0039
- 0.0045 0.0060
- 0.0055 0.0070
- 0.0035 0.0042
- 93 - S
- 4965 6210
- 806 1010 pF
- 325 410
- 73.5 110
- 12.8 - nC
- 8.2 -
0.6 1.0 1.4
- 15 23
- 11 17
ns
- 40 60
- 9 14
- - 128 A
- 0.75 1.2 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-1860-Rev. C, 13-Aug-12
2
Document Number: 67003
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
60
VGS = 10 V thru 4 V
48
60
48
SQJ410EP
Vishay Siliconix
36 36
24
12
0
0
150
VGS = 3 V
2468
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
24
12
0
0
0.015
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
120
TC = - 55 °C
90
TC = 25 °C
60
TC = 125 °C
30
0
0
7000
5 10 15
ID - Drain Current (A)
Transconductance
20
6000
5000
Ciss
4000
3000
2000
1000
Coss
Crss
0
0
5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
25
30
0.012
0.009
0.006
0.003
VGS = 4.5 V
VGS = 10 V
0
0 10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 15 A
8
VDS = 15 V
6
60
4
2
0
0 20 40 60 80
Qg - Total Gate Charge (nC)
Gate Charge
S12-1860-Rev. C, 13-Aug-12
3
Document Number: 67003
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0 100
ID = 15 A
1.7
VGS = 10 V
10
1.4 1
VGS = 4.5 V
1.1 0.1
TJ = 150 °C
SQJ410EP
Vishay Siliconix
TJ = 25 °C
0.8 0.01
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.025
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
0.5
0.020
0.1
0.015
0.010
0.005
TJ = 150 °C
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
ID = 1 mA
38
- 0.3
- 0.7
- 1.1
ID = 5 mA
ID = 250 μA
- 1.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
36
34
32
30
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-1860-Rev. C, 13-Aug-12
4
Document Number: 67003
For technical questions, contact: automos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



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