SPP2311 Datasheet PDF - SYNC POWER

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SPP2311
SYNC POWER

Part Number SPP2311
Description P-Channel Enhancement Mode MOSFET
Page 8 Pages


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SPP2311
P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP231 1 is t he P -Channel enhancement m ode
power field effect transistors are produced using high cell
density , D MOS trench technolog y. This high densit y
process is especi ally tailored to minim ize on-state
resistance an d provi de superior switching perform ance.
These devic es are particu larly suited for low voltage
applications such as noteboo
k co mputer power
management and other battery powered circuits where
high-side s witching , low in-line power los s, and
resistance to transients are needed.
APPLICATIONS
Drivers : Relays/Solenoids/Lamps/Hammers
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
FEATURES
P-Channel
-20V/0.45A,RDS(ON)= 0.65@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.90@VGS=-2.5V
-20V/0.25A,RDS(ON)= 1.5@VGS=-1.8V
-20V/0.25A,RDS(ON)= 3.0@VGS=-1.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION( SOT-23 )
PART MARKING
2013/10/18 Ver.1
Page 1
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SPP2311
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin Symbol
1
2
3
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPP2311S23RGB
Package
SOT-23
SPP2311S23RGB : Tape Reel ; Pb – Free, Halogen – Free
Part Marking
S11
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter Symbol
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150) TA=25
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25
Operating Junction Temperature
Storage Temperature Range
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
2013/10/18 Ver.1
Typical
-30
±12
-0.45
-1.0
-0.3
0.15
-55/150
-55/150
Unit
V
V
A
A
A
W
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SPP2311
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter Symbol
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA -30
VGS(th) VDS=VGS,ID=-250uA -0.35
IGSS VDS=0V,VGS=±12V
VDS=-24V,VGS=0V
IDSS VDS=-24V,VGS=0V
TJ=55
ID(on) VDS-4.5V,VGS =-5V
RDS(on)
gfs
VGS=-4.5V,ID=-0.45A
VGS=-2.5V,ID=-0.35A
VGS=-1.8V,ID=-0.25A
VGS=-1.5V,ID=-0.25A
VDS=-10V,ID=-0.25A
VSD IS=-0.15A,VGS=0V
-0.7
550
750
1100
2200
0.4
-0.8
-1.0
±30
-1
-5
650
900
1500
3000
-1.2
V
uA
uA
A
m
S
V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-4.5V ,ID
-0.6A
VDD=-10V,RL=10,
ID-0.4A
VGEN=-4.5V ,RG=6
1.5
0.3
0.35
5
15
8
1.4
2.0
nC
10
25
ns
15
1.8
2013/10/18 Ver.1
Page 3



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SPP2311
P-Channel Enhancement Mode MOSFET
TYPICAL CHA RACTERISTICS
2013/10/18 Ver.1
Page 4



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