SPN80T10 Datasheet PDF - SYNC POWER

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SPN80T10
SYNC POWER

Part Number SPN80T10
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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SPN80T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN80T10 is the N-Channe l logi c enhancement m ode
power field ef fect transistor which is produced using super
high cell den sity DMOS tr ench technology. The SPN80T10
has been designed specifically to im prove the overall
efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been
optimized for low gate charge, low R DS(ON) and fast
switching speed.
APPLICATIONS
Powered System
DC/DC Converter
Load Switch
FEATURES
100V/85A, RDS(ON)=7.1m@VGS= 10V
High density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current
capability
TO-220 package design
PIN CONFIGURATION
T O-220
2013/10/29 Ver.1
PART MARKING
Page 1
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SPN80T10
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin Symbol
1
2
3
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
Package
SPN80T10T220TGB
TO-220-3L
SPN80T10T220TGB : Tube ; Pb – Free ; Halogen - Free
Part Marking
SPN80T10
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter Symbol
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25
TA=70
Power Dissipation @ TA=25
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
VDSS
VGSS
ID
IDM
PD
TJ
TSTG
RθJA 62
Typical
100
±25
85
60
300
166
-55/150
-55/150
Unit
V
V
A
A
W
/W
2013/10/29 Ver.1
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SPN80T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25Unless otherwise noted)
Parameter Symbol
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA 100
VGS(th) VDS=VGS,ID=250uA 2.0
IGSS VDS=0V,VGS=±25V
VDS=80V,VGS=0V
IDSS VDS=80V,VGS=0V
TJ=125
RDS(on) VGS= 10V,ID=40A
gfs VDS=10V,ID=40A
VSD IS=30A,VGS =0V
4.0
±100
25
100
V
nA
uA
7.1 m
75 S
1.3 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=80V,VGS=10V
ID= 40A
VDS=25,VGS=0V
f=1MHz
VDD=50V,RL=1
ID30A,VGEN=10V
RG=1.66
1 15
20
48
6000
550
300
21
58
41
15
180
nC
9600
pF
nS
2013/10/29 Ver.1
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SPN80T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2013/10/29 Ver.1
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SYNC POWER
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