SPN02N60S5 Datasheet PDF - Infineon Technologies

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SPN02N60S5
Infineon Technologies

Part Number SPN02N60S5
Description Power Transistor
Page 9 Pages


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Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Extreme dv/dt rated
www.DataSheet4UU.clotrma low effective capacitances
Improved transconductance
SPN02N60S5
VDS
RDS(on)
ID
600 V
3
0.4 A
SOT-223
4
3
2
1 VPS05163
Type
SPN02N60S5
Package
SOT-223
Ordering Code
Q67040-S4207
Marking
02N60S5
Maximum Ratings
Parameter
Continuous drain current
TA = 25 °C
TA = 70 °C
Pulsed drain current, tp limited by Tjmax
TA = 25 °C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TA = 25°C
Operating and storage temperature
Symbol
ID
ID puls
VGS
VGS
Ptot
Tj , Tstg
Value
0.4
0.3
2.2
±20
±30
1.8
-55... +150
Unit
A
V
W
°C
Rev. 2.1
Page 1
2004-03-30



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SPN02N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C
Thermal Characteristics
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Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
dv/dt
Value
20
Unit
V/ns
Symbol
RthJS
RthJA
Tsold
min.
-
Values
typ. max.
30 -
Unit
K/W
- 110 --
- - 70
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=1.8A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
ID=80µΑ, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
3.5
-
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=1.1A,
Tj=25°C
Tj=150°C
-
-
-
Values
typ. max.
--
700 -
4.5 5.5
0.5 1
- 50
- 100
2.5 3
6.8 -
Unit
V
µA
nA
Rev. 2.1
Page 2
2004-03-30



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SPN02N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Characteristics
Transconductance
gfs
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Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDS2*ID*RDS(on)max,
ID=0.3A
VGS=0V, VDS=25V,
f=1MHz
VDD=350V, VGS=0/10V,
ID=0.4A, RG=50
-
-
-
-
-
-
-
-
Values
typ. max.
0.5 -
250 -
110 -
8-
30 -
15 -
110 -
30 -
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Qgs VDD=350V, ID=0.4A
Gate to drain charge
Qgd
Gate charge total
Qg VDD=350V, ID=0.4A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=0.4A
- 1.8 - nC
- 4.5 -
- 7.4 -
- 8 -V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.1
Page 3
2004-03-30



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SPN02N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Inverse diode continuous
forward current
IS TA=25°C
- - 0.4 A
www.DataSheeIt4nUv.ceormse diode direct current,
pulsed
ISM
- - 2.2
Inverse diode forward voltage VSD VGS=0V, IF=IS
Reverse recovery time
trr VR=350V, IF=IS ,
Reverse recovery charge
Qrr diF/dt=100A/µs
- 0.85 1.05 V
- 200 - ns
- 0.7 - µC
Rev. 2.1
Page 4
2004-03-30



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Infineon Technologies
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