SPB2026Z Datasheet PDF - RFMD

www.Datasheet-PDF.com

SPB2026Z
RFMD

Part Number SPB2026Z
Description 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
Page 16 Pages


SPB2026Z datasheet pdf
Download PDF
SPB2026Z pdf
View PDF for Mobile

No Preview Available !

SPB2026Z
0.7GHz to
2.2GHz 2W
InGaP Ampli-
fier
SPB2026Z
0.7GHz to 2.2GHz 2W InGaP AMPLIFIER
NOT FOR NEW DESIGNS
Package: SOF-26
Product Description
RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar
Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated
package. This HBT amplifier is made with InGaP on GaAs device technology and
fabricated with MOCVD for an ideal combination of low cost and high reliability. This
product is well suited for use as a driver stage in macro/micro-cell infrastructure
equipment or as the final output stage in pico-cell infrastructure equipment. It can
run from a 3V to 6V supply. It is prematched to ~5on the input for broadband
performance and ease of matching at the board level. It features an input power
detector, on/off power control, ESD protection, excellent over-
Optimum Technology
Matching® Applied
all robustness and a hand reworkable and thermally enhanced
SOF-26 package. This product is RoHS and WEEE compliant.
GaAs HBT
GaAs MESFET
p
Vcc = 5V
InGaP HBT
SiGe BiCMOS
Functional Block Diagram
Si BiCMOS
SSZPPB- 2-2002266
SiGe HBT
GaAs pHEMT
Si CMOS
RFIN
V bias = 5V
A c tiv e
Bias
RFOUT
Si BJT
GaN HEMT
RF MEMS
Pow er
Up/Dow n
Co n tr o l
Pow er
Detec tor
Features
P1dB=33.8dBm at 5V,
1960 MHz
ACP=-45dBc with 25dBm
Channel Power at 1960MHz
On-Chip Input Power Detector
Low Thermal Resistance
Package
Power Up/Down Control <1s
Robust Class 1C ESD
Applications
Macro/Micro-Cell Driver
Stage
Pico-Cell Output Stage
GSM, CDMA, TDSCDMA,
WCDMA
Single and Multi-Carrier Appli-
cations
Parameter
Small Signal Gain
Output Power at 1dB Compression
Third Order Supression
WCDMA Channel Power
WCDMA Channel Power
Min.
12.2
12.1
31.3
-42.0
Specification
Typ.
13.6
13.7
13.6
33.9
33.8
32.8
-49.0
-45.0
-48.0
-55.0
-55.0
-55.0
-45.0
Input Return Loss
11.0
14.0
Output Return Loss
9.0 12.0
Noise Figure
Voltage Range
5.2
0.85 to 1.4
Thermal Resistance
12.0
Quiescent Current
380 445
Power up Control Current
2.1
VCC Leakage Current
Test Conditions: VCC=5V, ICQ=445mA Typ., TL=25°C, ZS=ZL=50
Max.
15.2
15.1
-48.0
6.2
500
100
Unit
dB
dB
dB
dBm
dBm
dBm
dBc
dBc
dBc
dBc ACP
dBc ACP
dBc ACP
dBc ACP
dB
dB
dB
V
°C/W
mA
mA
uA
Condition
1842 MHz
1960 MHz
2140 MHz
1842 MHz
1960 MHz
2140 MHz
1842MHz, 22dBm per tone, 1MHz spacing
1960MHz, 22dBm per tone, 1MHz spacing
2140MHz, 22dBm per tone, 1MHz spacing
1842MHz, tested with 64 Channels, FWD, 23dBm
1960MHz, tested with 64 Channels, FWD, 23dBm
2140MHz, tested with 64 Channels, FWD, 23dBm
1842MHz, 1960MHz, and 2140MHz. Tested with
64 Channels, FWD, 25dBm.
1930MHz to 1990MHz
1930MHz to 1990MHz
1960 MHz
CW POUT=13dBm to 33dBm
junction - lead
VCC = 5 V
VPC = 5 V
VCC=5V, VPC=0V
DS120601
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 16



No Preview Available !

SPB2026Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ICE)
*Device Voltage (VCC)
RF Input Power with 50output
load
1500
7
28
mA
V
dBm
RF Input Power with 10:1 VSWR 23 dBm
output load
RF Output Power with 50output
load (Continuous long term
operation)
30
dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Power Dissipation (PDISS)
ESD Rating - Human Body Model
(HBM)
6
Class 1C
W
Moisture Sensitivity Level
MSL 1
*Note: No RF Drive
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Simplified Device Schematic
GND
VBIAS 1
RFIN 2
VPC 3
6 NC
Bias
5
RFOUT/
VCC
4 VDET
GND
2 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120601



No Preview Available !

SPB2026Z
Typical RF Performance (1805MHz to 1880MHz Application Circuit)
Single Carrier ACP versus Channel Power
@1842MHz
-20.0
-30.0
25°C
-40°C
85°C
System
Dual Carrier ACP versus Channel Power
-20.0
-30.0
25°C
-40°C
85°C
System
@1842MHz
-40.0
-40.0
-50.0
-50.0
-60.0
WCDMA with 64 DPCH
-70.0
14.0
16.0
18.0
20.0
22.0
Channel Power (dBm)
Source ACPR
24.0
26.0
IM3 versus Frequency
(22dBm Output Tones)
-20.0
25°C
-40°C
-30.0
85°C
-60.0
WCDMA with 64 DPCH and 5MHz spacing
Source ACPR
-70.0
14 15 16 17 18 19 20 21 22 23 24 25 26
Channel Power (dBm)
IM3 versus Tone Power @ 1842MHz
-20.0
-30.0
-40.0
-40.0
-50.0
-50.0
-60.0
-70.0
1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88
Frequency (GHz)
-60.0
25°C
-40°C
85°C
-70.0
14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0
POUT per tone (dBm)
DS120601
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 16



No Preview Available !

SPB2026Z
Typical RF Performance (1805MHz to 1880MHz Application Circuit)
P1dB versus Frequency
36.0
34.0
34.0
30.0
PIN versus POUT @ 1842MHz
32.0
30.0
28.0 25°C
-40°C
85°C
26.0
1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88
Frequency (GHz)
Noise Figure vs. Frequency
7.0
26.0
22.0
18.0
14.0 25°C
-40°C
85°C
10.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0
PIN (dBm)
VDETECT versus POUT @ 1842MHz
1.2
6.0 1.1
5.0 1.0
4.0 0.9
3.0
2.0
25°C
-40°C
85°C
1.0
1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88
Frequency (GHz)
0.8
0.7
25°C
-40°C
85°C
0.6
13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 29.0 31.0 33.0
POUT (dBm)
4 of 16
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS120601



SPB2026Z datasheet pdf
Download PDF
SPB2026Z pdf
View PDF for Mobile


Related : Start with SPB2026 Part Numbers by
SPB2026Z 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER SPB2026Z
RFMD
SPB2026Z pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact