| Part Number | SML80J25 |
| Manufacturer | Seme LAB |
| Title | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| Description | SML80J25 SOT–227 Package Outline. Dimensions in mm (inches) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 ... |
| Features |
either Source terminal.
D
G S
StarMOS is a new generation of high voltage N –Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ... |
| Published | Apr 16, 2005 |
| Datasheet |
 SML80J25 File
|
| Part Number | SML80J28 |
| Manufacturer | Seme LAB |
| Title | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| Description | SML80J28 SOT–227 Package Outline. Dimensions in mm (inches) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 . |
| Features |
either Source terminal.
D
G S
StarMOS is a new generation of high voltage N –Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. . |
| Datasheet |
SML80J28 File
|
