SMG3018K Datasheet PDF - SeCoS

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SMG3018K
SeCoS

Part Number SMG3018K
Description N-Channel Enhancement Mode Power MosFET
Page 4 Pages


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Elektronische Bauelemente
SMG3018K
640mA, 30V,RDS(ON)8
N-Channel Enhancement Mode Power Mos.FET
Description
The SMG3018K utilized advanced processing
techniques to achieve the lowest possible on-
resistance, extremely efficient and cost-
effectiveness device. The SMG3018K is
universally used for all commercial-industrial
applications.
Features
* RoHS Compliant
* Simple Drive Requirement
* Small Package Outline
Marking : 3018E
G
A
L
3
S Top View
21
B
D
G
C
H
Drain
Gate
Source
D
K
SC-59
Dim Min Max
A 2.70 3.10
B 1.40 1.60
C 1.00 1.30
D 0.35 0.50
G 1.70 2.10
J H 0.00 0.10
J 0.10 0.26
K 0.20 0.60
L 0.85 1.15
S 2.40 2.80
All Dimension in mm
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
S
Symbol
VDS
VGS
ID@TA=25 oC
ID@TA=70 oC
IDM
PD@TA=25 oC
Tj, Tstg
Ratings
30
±20
640
500
950
1.38
0.01
-55~+150
Unit
V
V
mA
mA
mA
W
W / oC
oC
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Max.
Symbol
Rthj-a
Ratings
90
Unit
oC /W
Any changing of specification will not be informed individual
Page 1 of 4
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Elektronische Bauelemente
SMG3018K
640mA, 30V,RDS(ON)8
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
IGSS
IDSS
Static Drain-Source On-Resistance
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
nput Capacitance
IOutput Capacitance
Reverse Transfer Capacitance
Forward Transconductance
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
30
_
0.5
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
0.06
_
_
_
_
_
_
1
0.5
0.5
12
10
56
29
32
8
6
600
Max.
_
_
2.0
±10
1
100
8
13
1.6
_
_
_
_
_
_
50
_
_
_
Unit
V
Test Condition
VGS=0V, ID=250uA
V/ oC Reference to 25oC, ID=1mA
V VDS=VGS, ID=250uA
uA VGS=± 20V
uA VDS=30V,VGS=0
uA VDS=24V,VGS=0
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
ID=600mA
nC VDS=50V
VGS=4.5V
VDD=30V
ID=600mA
nS VGS=10V
RG=3.3
RD=52
VGS=0V
pF VDS=25V
f=1.0MHz
mS VDS=10V, ID=600mA
Source-Drain Diode
Parameter
Forward On Voltage 2
Symbol
VDS
Min. Typ.
__
Max.
1.2
Unit
V
Test Condition
IS=1.2 A, VGS=0V.
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width 300us, dutycycle 2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4



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Elektronische Bauelemente
Characteristics Curve
SMG3018K
640mA, 30V,RDS(ON)8
N-Channel Enhancement Mode Power Mos.FET
Fig 1. Typical Output Char acteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistan ce
v.s. Ju nction Temperat ure
Fig 5. Forward Char acteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Ju nction Temperat ure
Any changing of specification will not be informed individual
Page 3 of 4



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Elektronische Bauelemente
SMG3018K
640mA, 30V,RDS(ON)8
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4



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