SIF2N60C Datasheet PDF - SI Semiconductors

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SIF2N60C
SI Semiconductors

Part Number SIF2N60C
Description N-CHANNEL POWER MOSFET
Page 6 Pages


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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF2N60C
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLASTELECTRONIC TRANSFORMERSWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°C
TO-220/220FP
参数
PARAMETER
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
漏极电流
Continuous Drain Current
TC=25
漏极电流
Continuous Drain Current
TC=100
符号
SYMBOL
VDS
VGS
ID
ID
额定值
VALUE
600
±30
2.0
1.25
单位
UNIT
V
V
A
A
VDS=600V
RDS(ON)=4.5Ω
ID=2.0A
最大脉冲电流
Drain Current Pulsed
IDM
8A
耗散功率
Power Dissipation
最高结温
Junction Temperature
存储温度
Storage Temperature
Ptot
Tj
TSTG
TO-220:54
TO-220FP:23
150
-55-150
W
°C
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
120 mJ
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
PARAMETER
符号
SYMBOL
-源击穿电压
Drain-source Breakdown Voltage
BVDSS
测试条件
TEST CONDITION
VGS=0V, ID=250µA
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
ΔBVDSS/
ΔTj
VGS(TH)
-源漏电流
Drain-source Leakage Current
IDSS
ID=250uA, Referenced to
25°C
VGS=VDS, ID=250µA
VDS =600V,
VGS =0V, Tj=25°C
VDS =480V,
VGS =0V, Tj=125°C
跨导
Forward Transconductance
gfs
VDS =40V, ID=1A
最小值
MIN
600
2.0
典型值
TYP
0.6
1.5
最大值 单位
MAX UNIT
V
V/°C
4.0 V
25 µA
250 µA
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF2N60C TO-220-TU
SIF2N60C TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
SIF2N60C TO-220FP-TU
SIF2N60C TO-220FP-TU-HF
Si semiconductors 2013.12
1



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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
产品规格书
Product Specification
SIF2N60C
参数
PARAMETER
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
-源导通电阻
Static Drain-source On
Resistance
输入电容
Input Capacitance
关断延迟
Turn -Off Delay Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward
Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
测试条件
TEST CONDITION
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
IGSS VGS =±30V
±100
nA
RDS(ON)
VGS =10V, ID=1.0A
4.2 4.5 Ω
Ciss
Td(off)
Qg
Qgs
Qgd
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=300V, ID =2.0A
RG=25Ω
ID =2.0A, VDS = 480V
VGS = 10V
320
24
7.2
4.3
1.6
pF
ns
nC
nC
nC
IS
VSD
Tj=25°C, Is=2.0A
VGS =0V
trr Tj=25°C,If=2.0A
di/dt=100A/μs
Qrr
2.0 A
1.4 V
380 ns
0.9 uC
●热特性
Thermal Characteristics
参数
PARAMETER
热阻结-
Thermal Resistance Junction-case
热阻结-环境
Thermal Resistance Junction-ambient
符号
SYMBOL
RthJC
RthJA
TO-220
2.31
最大值
MAX
TO-220FP
5.43
62.5 62.5
单位
UNIT
/W
/W
注释(Notes):
脉冲宽度:以最高结温为限制
Repetitive rating: Pulse width limited by maximum junction temperature
初始结温=25oC, VDD =50V, L=56mH, RG =25Ω, IAS=2A
Starting Tj=25oC, VDD =50V, L=56mH, RG =25Ω, IAS=2A
脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Si semiconductors 2013.12
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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF2N60C
1 输出特性曲线, Tc=25
Fig1 Typical Output Characteristics, Tc=25
2 输出特性曲线, Tc=150
Fig2 Typical Output Characteristics, Tc=150
3 归一化导通电阻与温度曲线
Fig3 Normalized Resistance Vs. Temperature
4 二极管正向压降曲线
Fig4 Typical Source-Drain Diode Forward Voltage
5 最大漏极电流与壳温曲线
Fig5 Maximum Drain Current Vs. Case Temperature
Si semiconductors 2013.12
3



No Preview Available !

深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF2N60C
6-1 SIF2N60C(TO-220)
最大安全工作区曲线
Fig6-1 Maximum Safe Operating Area
6-2 SIF2N60C(TO-220FP)
最大安全工作区曲线
Fig6-2 Maximum Safe Operating Area
Si semiconductors 2013.12
4



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