SIF10N40C Datasheet PDF - SI Semiconductors

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SIF10N40C
SI Semiconductors

Part Number SIF10N40C
Description N-CHANNEL POWER MOSFET
Page 9 Pages


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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
SIF10N40C
●特点:导通电阻低 开关速度快 输入阻抗高 符合RoHS规范
FEATURES:■LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE
RoHS COMPLIANT
●应用:电子镇流器 电子变压器 开关电源
APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
●最大额定值(TC=25°C
Absolute Maximum RatingsTc=25°C
TO-220/220FP/262/263
参数
符号
额定值
单位
PARAMETER
-源电压
Drain-source Voltage
-源电压
gate-source Voltage
SYMBOL
VDS
VGS
VALUE
400
±20
UNIT
V
V
漏极电流
Continuous Drain Current
TC=25
ID
10 A
漏极电流
Continuous Drain Current
TC=100
ID
6.3 A
最大脉冲电流
Drain Current Pulsed
IDM
40 A
耗散功率
Power Dissipation
TO-220:140
PD
TO-220FP:40
W
TO-262/263:140
最高结温
Junction Temperature
Tj
150 °C
存储温度
Storage Temperature
TSTG
-55-150
°C
单脉冲雪崩能量
Single Pulse Avalanche Energy
EAS
310 mJ
漏极电流由最高结温限制
Drain current limited by maximum junction temperature
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
参数
符号
测试条件
最小值
PARAMETER
SYMBOL
TEST CONDITION
MIN
-源击穿电压
Drain-source Breakdown Voltage
击穿电压温度系数
Breakdown Voltage Temperature
Coefficient
栅极开启电压
Gate Threshold Voltage
BVDSS
ΔBVDSS/
ΔTj
VGS(TH)
VGS=0V, ID=250µA
ID=1mA, Referenced to
25°C
VGS=VDS, ID=250µA
400
2.0
-源漏电流
Drain-source Leakage Current
跨导
Forward Transconductance
IDSS
gfs
VDS =400V,
VGS =0V, Tj=25°C
VDS =320V,
VGS =0V, Tj=125°C
VDS =50V, ID=5A
5
VDS=400V
RDS(ON)=0.55Ω
ID=10.0A
典型值
TYP
最大值
MAX
单位
UNIT
V
0.49 V/°C
4.0 V
25 µA
250 µA
S
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-220 条管装/TUBE PACKING
SIF10N40C TO-220-TU
SIF10N40C TO-220-TU-HF
TO-220FP 条管装/TUBE PACKING
SIF10N40C TO-220FP-TU
SIF10N40C TO-220FP-TU-HF
TO-262 263 条管装/TUBE PACKING
SIF10N40C TO-262-TU
SIF10N40C TO-263-TU
SIF10N40C TO-262-TU-HF
SIF10N40C TO-263-TU-HF
TO-263 编带装/TAPE & REEL PACKING
SIF10N40C TO-263-TR
SIF10N40C TO-263-TR-HF
Si semiconductors 2013.5
1



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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
参数
PARAMETER
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
-源导通电阻
Static Drain-source On
Resistance
输入电容
Input Capacitance
关断延迟
Turn -Off Delay Time
栅极电荷
Total Gate Charge
栅源电荷
Gate-to-Source Charge
栅漏电荷
Gate-to-Drain Charge
二极管正向电流
Continuous Diode Forward
Current
二极管正向压降
Diode Forward Voltage
反向恢复时间
Reverse Recovery Time
反向恢复电荷
Reverse Recovery Charge
符号
SYMBOL
IGSS
RDS(ON)
Ciss
Td(off)
Qg
Qgs
Qgd
IS
VSD
trr
Qrr
测试条件
TEST CONDITION
VGS =±30V
VGS =10V, ID=5.0A
VGS = 0V, VDS = 25V
F = 1.0MHZ
VDD=200V, ID =10A
RG= 9.1Ω, RD= 20Ω
ID =10A, VDS = 320V
VGS = 10V
Tj=25°C, Is=10A
VGS =0V
Tj=25°C, If=10A
di/dt=100A/μs
产品规格书
Product Specification
SIF10N40C
最小值
MIN
典型值
TYP
最大值 单位
MAX UNIT
±100
nA
0.48 0.55 Ω
1200
pF
50 ns
24 nC
6 nC
9 nC
10 A
2V
370 ns
3.8 uC
●热特性
Thermal Characteristics
参数
PARAMETER
热阻结-
Thermal Resistance Junction-case
热阻结-环境
Thermal Resistance Junction-ambient
符号
SYMBOL
RthJC
RthJA
TO-220
0.89
62.5
最大值
MAX
TO-220FP
3.13
62.5
TO-262/263
0.89
62.5
单位
UNIT
/W
/W
注释(Notes):
脉冲宽度:以最高节温为限制
Repetitive rating: Pulse width limited by maximum junction temperature
初始结温=25oC, VDD =50V, L=9.1mH, RG =25Ω, IAS=10A
Starting Tj=25oC, VDD =50V, L=9.1mH, RG =25Ω, IAS=10A
脉冲测试:脉冲宽度≤ 300μs ,占空比≤ 2
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
Si semiconductors 2013.5
2



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深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF10N40C
1 输出特性曲线, Tc=25
Fig1 Typical Output Characteristics, Tc=25
2 输出特性曲线, Tc=150
Fig2 Typical Output Characteristics, Tc=150
3 归一化导通电阻与温度曲线
Fig3 Normalized Resistance Vs.Temperature
4 二极管正向电压曲线
Fig4 Typical Source-Drain Diode Forward Voltage
5 最大漏极电流与壳温曲线
Fig5 Maximum Drain Current Vs.Case Temperature
Si semiconductors 2013.5
3



No Preview Available !

深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
N-沟道功率 MOS / N-CHANNEL POWER MOSFET
● 特性曲线
产品规格书
Product Specification
SIF10N40C
6-1 SIF10N40C(TO-220)
最大安全工作区曲线
Fig6-1 Maximum Safe Operating Area
6-2 SIF10N40C(TO-220FP)
最大安全工作区曲线
Fig6-2 Maximum Safe Operating Area
6-3 SIF10N40C(TO-262&263)
最大安全工作区曲线
Fig6-3 Maximum Safe Operating Area
Si semiconductors 2013.5
4



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