SIA417DJ Datasheet PDF - Vishay

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SIA417DJ
Vishay

Part Number SIA417DJ
Description P-Channel 8-V (D-S) MOSFET
Page 7 Pages


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New Product
P-Channel 8-V (D-S) MOSFET
SiA417DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.023 at VGS = - 4.5 V
0.031 at VGS = - 2.5 V
- 8 0.040 at VGS = - 1.8 V
0.058 at VGS = - 1.5 V
0.095 at VGS = - 1.2 V
PowerPAK SC-70-6L-Single
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
ID (A)
- 12a
- 12a
- 12a
- 12a
- 12a
Qg (Typ.)
19 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
RoHS
COMPLIANT
APPLICATIONS
• Load Switch, PA Switch for Portable Devices
S
Marking Code
Part # code
BHX
XXX
Lot Traceability
and Date code
Ordering Information: SiA417DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
-8
±5
- 12a
- 12a
- 12a, b, c
- 8.3b, c
- 30
- 12a
- 2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36 °C/W
6.5
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 74637
S-80437-Rev. B, 03-Mar-08
www.vishay.com
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SiA417DJ
Vishay Siliconix
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 8 V, VGS = 0 V
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 7 A
VGS = - 2.5 V, ID = - 6 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 1.8 V, ID = - 5.3 A
VGS = - 1.5 V, ID = - 1.7 A
VGS = - 1.2 V, ID = - 1.1 A
Forward Transconductancea
gfs VDS = - 4 V, ID = - 7 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 4 V, VGS = - 5 V, ID = - 10 A
Gate-Source Charge
Qgs VDS = - 4 V, VGS = - 4.5 V, ID = - 10 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 4 V, RL = 0.5 Ω
ID - 8.3 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 4 V, RL = 0.5 Ω
ID - 8.3 A, VGEN = - 5 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 8.3 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 8.3 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
-8
- 0.35
- 10
Typ.
- 7.3
2.5
0.019
0.026
0.033
0.043
0.063
23
1600
500
320
21
19
2.2
5
8
15
25
80
45
10
12
80
45
- 0.8
60
33
15
45
Max.
Unit
-1
± 100
-1
- 10
0.023
0.031
0.040
0.058
0.095
V
mV/°C
V
nA
µA
A
Ω
S
pF
32
29
nC
25
38
120
70
15
20
120
70
- 12
- 30
- 1.2
90
50
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 74637
S-80437-Rev. B, 03-Mar-08
Free Datasheet http://www.datasheet4u.com/



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New Product
SiA417DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 10
VGS = 5 V thru 2 V
25
8
20
6
15 VGS = 1.5 V
4
10
5
VGS = 1 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
0
0.0
0.12 2500
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.3 0.6 0.9 1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
0.10
0.08
0.06
0.04
VGS = 1.2 V
VGS = 1.5 V
VGS = 1.8 V
VGS = 2.5 V
0.02
0.00
0
VGS = 4.5 V
5 10 15 20 25 30
I D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
ID = 10 A
4
VDS = 4 V
3
VDS = 6.4 V
2
1
0
0 5 10 15 20 25
Qg - Total Gate Charge (nC)
Gate Charge
2000
1500
Ciss
1000
500
0
0
Crss
Coss
246
VDS - Drain-to-Source Voltage (V)
Capacitance
8
1.4
ID = 7 A
1.3
VGS = 4.5 V, 2.5 V, 1.8 V, 1.5 V
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74637
S-80437-Rev. B, 03-Mar-08
www.vishay.com
3
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SiA417DJ
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
ID = 7 A
0.08
TJ = 150 °C
TJ = 25 °C
10
1
0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.7
1.2
0.06
0.04
125 °C
0.02
25 °C
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
0.6 25
0.5
ID = 250 µA
0.4
20
15
0.3 10
0.2
0.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
IDM Limited
Limited by RDS(on)*
10
ID(on)
1 Limited
0.1 TA = 25 °C
Single Pulse
5
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
BVDSS Limited
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74637
S-80437-Rev. B, 03-Mar-08
Free Datasheet http://www.datasheet4u.com/



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SIA417DJ P-Channel 8-V (D-S) MOSFET SIA417DJ
Vishay
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