SIA416DJ Datasheet PDF - Vishay

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SIA416DJ
Vishay

Part Number SIA416DJ
Description N-Channel 100 V (D-S) MOSFET
Page 9 Pages


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N-Channel 100 V (D-S) MOSFET
SiA416DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
100 0.083 at VGS = 10 V
0.130 at VGS = 4.5 V
ID (A)a
11.3
9
Qg (Typ.)
3.5 nC
PowerPAK SC-70-6L-Single
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
Bottom View
Ordering Information:
SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• DC/DC Converters
• Full-Bridge Converters
• For Power Bricks and POL Power
Marking Code
D
Part # code
ARX
XXX
Lot Traceability
and Date code
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
100
± 20
11.3
9
4.8b, c
3.9b, c
15
12
2.9b, c
3
0.45
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36 °C/W
6.5
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63649
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-1765-Rev. A, 23-Jul-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



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SiA416DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 3.2 A
VGS = 4.5 V, ID = 2.6 A
VDS = 10 V, ID = 3.2 A
100 V
54
- 4.4
mV/°C
1.6 3 V
± 100
nA
1
µA
10
10 A
0.068
0.092
0.083
0.130
8S
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 50 V, VGS = 0 V, f = 1 MHz
VDS = 50 V, VGS = 10 V, ID = 4.8 A
295
92
16
6.5 10
3.5 5.3
pF
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Qoss
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 50 V, VGS = 4.5 V, ID = 4.8 A 1.2 nC
1.9
VDS = 50 V, VGS = 0 V
f = 1 MHz
7.6
0.4 1.8 3.6
5 10
VDD = 50 V, RL = 12.8
ID 3.9 A, VGEN = 10 V, Rg = 1
13 25
10 20
10 20
ns
25 50
VDD = 50 V, RL = 12.8
ID 3.9 A, VGEN = 4.5 V, Rg = 1
100 200
15 30
25 50
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
12
A
15
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
IS = 3.9 A
IF = 3.9 A, dI/dt = 100 A/µs, TJ = 25 °C
0.85 1.2
30 60
30 60
20
10
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63649
2 S12-1765-Rev. A, 23-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
VGS = 10 V thru 6 V
16
VGS = 5 V
10
8
SiA416DJ
Vishay Siliconix
12 6
8 VGS = 4 V
4
VGS = 3 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
4
2
0
0
500
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
0.16
0.12
0.08
VGS = 4.5 V
VGS = 10 V
400
Ciss
300
200 Coss
0.04
0
0 3 6 9 12 15
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 4.8 A
8
VDS = 50 V
6
VDS = 25 V
4
VDS = 75 V
2
0
02468
Qg - Total Gate Charge (nC)
Gate Charge
100
0
0
Crss
5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.8
ID = 3.2 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63649
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-1765-Rev. A, 23-Jul-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

SiA416DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
TJ = 150 °C
0.40
0.32
ID = 3.2 A
0.24
1 TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
2.7
2.5
2.3
2.1
ID = 250 μA
1.9
1.7
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0.16
TJ = 125 °C
0.08
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01 0.1 1 10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 μs
1
1 ms
0.1
0.01
0.1
10 ms
TA = 25 °C
BVDSS Limited
100 ms
1s
10 s
DC
1 10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63649
4 S12-1765-Rev. A, 23-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



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SIA416DJ N-Channel 100 V (D-S) MOSFET SIA416DJ
Vishay
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