SIA413DJ Datasheet PDF - Vishay

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SIA413DJ
Vishay

Part Number SIA413DJ
Description P-Channel 12-V (D-S) MOSFET
Page 10 Pages


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P-Channel 12-V (D-S) MOSFET
SiA413DJ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.029 at VGS = - 4.5 V
- 12 0.034 at VGS = - 2.5 V
0.044 at VGS = - 1.8 V
0.100 at VGS = - 1.5 V
ID (A)
- 12a
- 12a
- 12a
-3
Qg (Typ.)
23 nC
PowerPAK SC-70-6L-Single
D
6
D
5
2.05 mm S
4
1
D
2
D
3
G
S
2.05 mm
Ordering Information:
SiA413DJ-T4-GE3 (Lead (Pb)-free and Halogen-free)
SiA413DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
Marking Code
Part # code
BFX
XXX
Lot Traceability
and Date code
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
- 12
±8
- 12a
- 12a
- 10b, c
- 8b, c
- 40
- 12a
- 2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
28
5.3
36 °C/W
6.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 70447
S12-1141-Rev. D, 21-May-12
For more information please contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



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SiA413DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS/TJ
VGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 12 V, VGS = 0 V
VDS = - 12 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 6.7 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 6.2 A
VGS = - 1.8 V, ID = - 2.3 A
VGS = - 1.5 V, ID = - 1 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 6.7 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 6 V, VGS = - 8 V, ID = - 10 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 10 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = 0.75
ID - 8 A, VGEN = - 4.5 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 6 V, RL = 0.75
ID - 8 A, VGEN = - 8 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 8 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 8 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 12
- 0.4
- 20
Typ.
Max.
Unit
- 11
2.7
0.024
0.028
0.036
0.050
30
-1
± 100
-1
- 10
0.029
0.034
0.044
0.100
V
mV/°C
V
nA
µA
A
S
1800
450
390
38
23
3
6.5
7
20
40
65
40
10
12
70
40
- 0.8
40
20
14
26
57
35
30
60
100
60
15
20
105
60
- 12
40
- 1.2
60
30
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For more information please contact: pmostechsupport@vishay.com
Document Number: 70447
S12-1141-Rev. D, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40 10
VGS = 5 thru 2.5 V
32 8
VGS = 2 V
24 6
SiA413DJ
Vishay Siliconix
16
8
0
0.0
0.08
VGS = 1.5 V
VGS = 1 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
0.07
0.06
0.05 VGS = 1.8 V
0.04
VGS = 2.5 V
0.03
VGS = 4.5 V
0.02
0
8 16 24 32
ID - Drain Current (A)
40
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 10 A
6
VDS = 6 V
VDS = 9.6 V
4
4
2
0
0.0
3000
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.3 0.6 0.9 1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
2500
2000
Ciss
1500
1000
Crss
500
Coss
0
0369
VDS - Drain-to-Source Voltage (V)
Capacitance
1.2
ID = 6.7 A
VGS = 4.5 V, 2.5 V
1.1
12
VGS = 4.5 V, 2.5 V
1.0
2 0.9
0
0 8 16 24 32 40
Qg - Total Gate Charge (nC)
Gate Charge
0.8
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70447
S12-1141-Rev. D, 21-May-12
For more information please contact: pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

SiA413DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.060
ID = 6.7 A
0.048
TJ = 150 °C
TJ = 25 °C
10
0.036
0.024
TA = 125 °C
TA = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.8
0.7
ID = 250 µA
0.6
0.5
0.012
0
1234
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
0.4 10
0.3 5
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1 1 10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
100 µs
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For more information please contact: pmostechsupport@vishay.com
Document Number: 70447
S12-1141-Rev. D, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Free Datasheet http://www.datasheet4u.com/



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SIA413DJ P-Channel 12-V (D-S) MOSFET SIA413DJ
Vishay
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