SI1488DH Datasheet PDF - Vishay Siliconix

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SI1488DH
Vishay Siliconix

Part Number SI1488DH
Description N-Channel 20-V (D-S) MOSFET
Page 7 Pages


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N-Channel 20-V (D-S) MOSFET
Si1488DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.049 at VGS = 4.5 V
20 0.056 at VGS = 2.5 V
0.065 at VGS = 1.8 V
ID (A)
6.1a
5.7
5.3
Qg (Typ)
6.0
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg & UIS Tested
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
AG XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current
Repetitive Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipationa
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
20
±8
6.1
4.9
4.6b, c
3.7b, c
20
10
5
2.3
1.3b, c
2.8
1.8
1.5b, c
1.0b, c
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 73788
S-61085–Rev. C, 19-Jun-06
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
°C/W
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Si1488DH
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductance
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/
TJ
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85 °C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 4.6 A
VGS = 2.5 V, ID = 4.3 A
VGS = 1.8 V, ID = 3.9 A
VDS = 10 V, ID = 4.6 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 5 V, ID = 4.6 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off DelayTime
Fall Time
td(off)
tf
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 4.6 A
f = 1 MHz
VDD = 10 V, RL = 2.7 Ω
ID 3.7 A, VGEN = 4.5 V, Rg = 1 Ω
TC = 25 °C
IS = 2.2 A
IF = 3.2 A, di/dt = 100 A/µs
Min Typ Max Unit
20
20.2
- 2.75
V
mV/°C
0.45 0.95
± 100
1
10
20
0.041 0.049
0.047 0.056
0.054 0.065
15
V
nA
µA
µA
A
Ω
mS
530
100
48
6.6 10
69
1.5
0.9
7.3 11
8.5 13
45 68
35 53
82 123
pF
pC
Ω
ns
0.8
10.6
3.7
6.2
4.4
2.3
20
1.2
16
5.7
A
V
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73788
S-61085–Rev. C, 19-Jun-06



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Si1488DH
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
20
VGS = 5 V thru 2.5 V
VGS = 2 V
15
5
4
10
5
0
0.0
0.09
VGS = 1.5 V
VGS = 1 V
0.6 1.2 1.8 2.4
VDS – Drain-to-Source Voltage (V)
Output Characteristics
3.0
3
2
TJ = 25 ° C
1
TJ = 125 ° C
0
0.0 0.4 0.8
TJ = - 55 ° C
1.2 1.6
2.0
VGS – Gate-to-Source Voltage (V)
Transfer Characteristics curves vs. Temp
800
0.08
0.07
0.06
0.05
VGS = 1.8 V
VGS = 2.5 V
0.04
VGS = 4.5 V
0.03
0
4 8 12 16
ID – Drain Current (A)
On-Resistance vs. Drain Current
5
ID = 4.6 A
4
VDS = 10 V
3
VDS = 16 V
2
20
1
0
0246
Qg – Total Gate Charge (nC)
Qg - Gate Charge
8
600 Ciss
400
200
Coss
Crss
0
0
4 8 12 16
VDS – Drain-Source Voltage (V)
Capacitance
1.8
20
1.6
VGS = 2.5 V, ID = 4.3 A
VGS = 1.8 V, ID = 3.9 A
1.4
1.2
VGS = 4.5 V, ID = 4.6 A
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ – Junction Temperature ( °C)
On-Resistance vs. Junction Temperature
Document Number: 73788
S-61085–Rev. C, 19-Jun-06
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Si1488DH
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TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
20 0.12
10
0.09
1
TJ = 150 °C
0.1
TJ = 25 °C
0.06
0.01 0.03
ID = 4.6 A
TA = 25 ° C
TA = 125 ° C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.0
0.8
ID = 250 µA
0.6
0.4
0.2
0.00
0
30
25
1234
VGS – Gate-to-Source Voltage (V)
rDS(on) vs VGS vs Temperature
20
15
10
5
5
0.0
- 50 - 25
0 25 50 75 100 125 150
TJ – Temperature (°C)
Threshold Voltage
0
0.001
0.01 0.1 1 10
Time (sec)
Single Pulse Power
100
* Limited by rDS(on)
10 1 ms
10 ms
1 100 ms
1s
10 s
0.1 dc
BVDSS Limited
0.01
0.001
TA = 25 ° C
Single Pulse
0.1 1 10 100
VDS – Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
100 600
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Document Number: 73788
S-61085–Rev. C, 19-Jun-06



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SI1488DH N-Channel 20-V (D-S) MOSFET SI1488DH
Vishay Siliconix
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