SI1467DH Datasheet PDF - Vishay Siliconix

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SI1467DH
Vishay Siliconix

Part Number SI1467DH
Description P-Channel 20-V (D-S) MOSFET
Page 7 Pages


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P-Channel 20-V (D-S) MOSFET
Si1467DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.090 at VGS = - 4.5 V
- 20 0.115 at VGS = - 2.5 V
0.150 at VGS = - 1.8 V
ID (A)c
- 1.6
- 1.6
- 1.6
Qg (Typ.)
9.0 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
AN XX
Lot Traceability
and Date Code
Part #
Code
Top View
Ordering Information: Si1467DH-T1-E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a, b
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
IDM
Continuous Source-Drain Diode Currenta, b
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipationa, b
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)c, d
Limit
- 20
±8
- 1.6c
- 1.6c
- 1.6a, b, c
- 1.6a, b, c
- 6.5c
- 1.6c
- 1.25a, b, c
2.78
1.78
1.5a, b
1a, b
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
V
A
W
°C
Unit
°C/W
Document Number: 68663
S-81216-Rev. A, 02-Jun-08
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 2.0 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 1.8 A
VGS = - 1.8 V, ID = - 1.5 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 2.0 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 5 Ω
ID - 2 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 5 Ω
ID - 2 A, VGEN = - 8 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 2 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.4
-3
2.0
Typ.
Max.
Unit
- 20
- 2.5
0.073
0.090
0.115
7
- 1.0
- 100
-1
- 10
0.090
0.115
0.150
V
mV/°C
V
nA
µA
A
Ω
S
561
112
89
9
1.0
2.5
10
16
43
36
18
7
10
33
10
- 0.78
21
15
9
12
13.5
20
30
75
70
35
14
20
50
20
- 1.6
- 6.5
- 1.2
35
25
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68663
S-81216-Rev. A, 02-Jun-08



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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8.0
VGS = 5 thru 2.5 V
6.4
VGS = 2 V
2.5
2.0
Si1467DH
Vishay Siliconix
4.8
3.2 VGS = 1.5 V
1.6
0.0
0.0
0.20
VGS = 1 V VGS = 0.5 V
0.6 1.2 1.8 2.4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
1.5
1.0
0.5
0.0
0.0
1200
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.4 0.8 1.2 1.6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.0
0.16
0.12
0.08
0.04
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.00
0.0 1.6 3.2 4.8 6.4 8.0
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8.0
ID = 2.5 A
6.4
VDS = 5 V
VDS = 15 V
4.8
VDS = 10 V
3.2
960
720
Ciss
480
240 Coss
Crss
0
04
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
1.6
ID = - 3 A
1.4
VGS = - 4.5 V
1.2
VGS = - 1.8 V
1.0
1.6 0.8
0.0
0.0
3.4
6.8
10.2
13.6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68663
S-81216-Rev. A, 02-Jun-08
17.0
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 0.25
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
0.20
0.15
0.10
0.05
ID = 2 A
TJ = 125 °C
TJ = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.4
0.3
ID = - 250 µA
0.2
0.1 ID = - 5 mA
0.0
- 0.1
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
10
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
24
18
12
6
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by RDS(on)*
1
1 ms
10 ms
100 ms
0.1 1 s
10 s
DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68663
S-81216-Rev. A, 02-Jun-08



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SI1467DH P-Channel 20-V (D-S) MOSFET SI1467DH
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