SI1450DH Datasheet PDF - Vishay Siliconix

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SI1450DH
Vishay Siliconix

Part Number SI1450DH
Description N-Channel 8-V (D-S) MOSFET
Page 7 Pages


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N-Channel 8-V (D-S) MOSFET
Si1450DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.047 at VGS = 4.5 V
0.051 at VGS = 2.5 V
8
0.058 at VGS = 1.8 V
0.069 at VGS = 1.5 V
ID (A)a
4.0a
4.0a
4.0a
4.0a
Qg (Typ)
4.24 nC
FEATURES
• TrenchFET® Power MOSFET: 1.5 V Rated
• 100 % Rg Tested
APPLICATIONS
RoHS
COMPLIANT
• Load Switch for Portable Applications
- Guaranteed Operation at VGS = 1.5 V
Critical for Optimized Design and Space Savings
SOT-363
SC-70 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
AH XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
8
±5
6.04a
4.8a
4.53a
3.62a
15
2.3
1.3c
2.78
1.78
1.56b, c
1.0b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74275
S-62079-Rev. A, 23-Oct-06
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Si1450DH
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
VDS = 8 V, VGS = 0 V
VDS = 8 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 4.0 A
Drain-Source On-State Resistancea
rDS(on)
VGS = 2.5 V, ID = 4.0 A
VGS = 1.8 V, ID = 4.0 A
VGS = 1.5 V, ID = 1.28 A
Forward Transconductancea
gfs VDS = 4 V, ID = 4.0 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 4 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 4 V, VGS = 5 V, ID = 4.0 A
Gate-Source Charge
Qgs VDS = 4 V, VGS = 4.5 V, ID = 4.0 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 4 V, RL = 1.11 Ω
ID 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 2.6 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 2.6 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min
8
0.3
15
Typ Max Unit
8.32
- 2.7
0.039
0.042
0.048
0.053
15.5
V
mV/°C
1
± 100
1
10
0.047
0.051
0.058
0.069
V
ns
µA
A
Ω
S
535
120
61
4.7
4.24
1.2
0.810
7.3
8
73
18
5
7.05
6.4
11
12
110
27
7.5
0.8
14.3
3.6
6.8
7.5
2.6
15
1.2
21.45
5.4
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74275
S-62079-Rev. A, 23-Oct-06



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TYPICAL CHARACTERISTICS 25 °C, unless noted
15
12
VGS = 5 thru 2 V
9
VGS = 1.5 V
6
3
VGS = 1 V
0
0.0 0.5 1.0 1.5 2.0
VDS – Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.08
VGS = 1.5 V
2.5
0.06
0.04
0.02
VGS = 1.5 V
VGS = 2.5 V
VGS = 4.5 V
0.00
0
3 6 9 12
ID – Drain Current (A)
rDS(on) vs. Drain Current
15
5
ID = 4.4 A
4
VDS = 4 V
VGS = 6.4 V
3
2
1
0
0
235
Qg – Total Gate Charge (nC)
Gate Charge
Document Number: 74275
S-62079-Rev. A, 23-Oct-06
6
Si1450DH
Vishay Siliconix
3
2
TC = 125 °C
1 TC = 25 °C
TC = - 55 °C
0
0.0
800
0.5 1.0 1.5
VGS – Gate-to-Source Voltage (V)
Transfer Characteristics
2.0
600 Ciss
400
200 Coss
Crss
0
0
246
VDS – Drain-to-Source Voltage (V)
Capacitance
8
1.6
VGS = 4.5 V
ID = 4.6 A
1.4
VGS = 2.5 V, ID = 4.4 A
1.2 VGS = 1.8 V, ID = 4.25 A
VGS = 1.5 V
1.0 ID = 1.2 A
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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TYPICAL CHARACTERISTICS 25 °C, unless noted
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.08
ID = 4.4 A
0.06
0.04
0.02
TA = 125 °C
TA = 25 °C
0.01
0
0.8
0.2 0.4 0.6 0.8
VSD − Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp
1
0.7
0.6 ID = 250 µA
0.5
0.4
0.3
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ – Temperature (°C)
Threshold Voltage
100
*Limited by rDS(on)
10
1
0.1
0.00
0
30
25
1234
VGS – Gate-to-Source Voltage (V)
rDS(on) vs. VGS vs. Temperature
5
20
15
10
5
0
0.001
0.01 0.1
1
10
Time (sec)
Single Pulse Power
100 600
10 ms
100 ms
1s
10 s
dc
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0.01
0.001
0.1
TA = 25 °C
Single Pulse
1
BVDSS Limited
10 100
VDS – Drain-to-Source Voltage (V)
*VGS minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 74275
S-62079-Rev. A, 23-Oct-06



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