SI1426DH Datasheet PDF - Vishay Siliconix

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SI1426DH
Vishay Siliconix

Part Number SI1426DH
Description N-Channel 30-V (D-S) MOSFET
Page 4 Pages


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N-Channel 30-V (D-S) MOSFET
Si1426DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.075 @ VGS = 10 V
30
0.115 @ VGS = 4.5 V
ID (A)
3.6
2.9
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
FEATURES
D TrenchFETr Power MOSFET
D Thermally Enhanced SC-70 Package
D PWM Optimized
APPLICATIONS
D Boost Converter in Portable Devices
– Low Gate Charge (3 nC)
D Low Current Synchronous Rectifier
Marking Code
AC XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
"20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
3.6 2.8
2.6 2.1
10
1.3 0.8
1.6 1.0
0.8 0.5
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 3.6 A
VGS = 4.5 V, ID = 2.0 A
VDS = 10 V, ID = 3.6 A
IS = 1.3 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 3.6 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.4 A. di/dt = 100/ms
Min Typ Max Unit
0.80
10
2.5
"100
1
5
0.061
0.092
5
0.78
0.075
0.115
1.2
V
nA
mA
A
W
S
V
1.9 3
0.75
nC
0.75
10 15
12 18
15 22 ns
9 15
40 70
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 10 thru 5 V
4V
8
6
4
3V
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS Drain-to-Source Voltage (V)
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Transfer Characteristics
10
8
6
4
TC = 125_C
2
25_C
55_C
0
012345
VGS Gate-to-Source Voltage (V)
Document Number: 71805
S-05803Rev. A, 18-Feb-02



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Si1426DH
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.16
250
Capacitance
0.12
0.08
0.04
VGS = 4.5 V
VGS = 10 V
200
150
100
Crss
50
Ciss
Coss
0.00
02468
ID Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 3.6 A
8
10
6
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
1 TJ = 150_C
TJ = 25_C
0
0 6 12 18 24 30
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6 ID = 3.6 A
1.4
1.2
1.0
0.8
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
ID = 1 A
ID = 3.6 A
0.08
0.04
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD Source-to-Drain Voltage (V)
1.2
Document Number: 71805
S-05803Rev. A, 18-Feb-02
0.00
0
2468
VGS Gate-to-Source Voltage (V)
10
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Si1426DH
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
30
0.2
0.0
ID = 250 mA
25
20
0.2
15
0.4
10
Single Pulse Power
0.6
5
0.8
50 25
0 25 50 75 100 125 150
TJ Temperature (_C)
0
0.001
0.01
0.1 1
Time (sec)
10
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
104
Single Pulse
103
102
101
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA =100_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
104
103
102
101
Square Wave Pulse Duration (sec)
1
10
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Document Number: 71805
S-05803Rev. A, 18-Feb-02



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SI1426DH N-Channel 30-V (D-S) MOSFET SI1426DH
Vishay Siliconix
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