SI1406DH Datasheet PDF - Vishay Siliconix

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SI1406DH
Vishay Siliconix

Part Number SI1406DH
Description N-Channel 20-V (D-S) MOSFET
Page 5 Pages


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N-Channel 20-V (D-S) MOSFET
Si1406DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.065 @ VGS = 4.5 V
20 0.075 @ VGS = 2.5 V
0.096 @ VGS = 1.8 V
ID (A)
3.9
3.6
3.2
FEATURES
D TrenchFETr Power MOSFETS
D 1.8-V Rated
D Thermally Enhanced SC-70
Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
G3
5D
4S
Top View
Marking Code
AB XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1406DH-T1
Si1406DH-T1—E3 (Lead (Pb)-Free)
Pb-free
Available
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
3.9 3.1
2.8 2.2
10
1.4 0.9
1.56
1.0
0.81
0.52
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70684
S-50366—Rev. B, 28-Feb-05
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
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Si1406DH
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.9 A
VGS = 2.5 V, ID = 3.6 A
VGS = 1.8 V, ID = 2 A
VDS = 10 V, ID = 3.9 A
IS = 1.4 A, VGS = 0 V
0.45
8
0.053
0.062
0.079
11
0.75
1.2
"100
1
5
0.065
0.075
0.096
1.1
V
nA
mA
A
W
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 3.9 A
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, Rg = 6 W
IF = 1.4 A. di/dt = 100/ms
4.9 7.5
1.0 nC
0.95
27 41
47 71
54 81 ns
29 44
35 60
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
8 VGS = 5 thru 2 V
Transfer Characteristics
10
8
6
1.5 V
4
2
1V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS Drain-to-Source Voltage (V)
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2
6
4
TC = 125_C
2
25_C
55_C
0
0.0 0.5 1.0 1.5 2.0 2.5
VGS Gate-to-Source Voltage (V)
Document Number: 70684
S-50366—Rev. B, 28-Feb-05



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Si1406DH
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
800
Capacitance
0.16
0.12
0.08
VGS = 1.8 V
VGS = 2.5 V
0.04
VGS = 4.5 V
0.00
0246
ID Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 3.9 A
4
8
10
3
2
1
0
012345
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
6
1 TJ = 150_C
TJ = 25_C
600
Ciss
400
200
Coss
0 Crss
04
8 12 16 20
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 4.5 V
1.6 ID = 3.9 A
1.4
1.2
1.0
0.8
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
ID = 2 A
ID = 3.9 A
0.08
0.04
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD Source-to-Drain Voltage (V)
1.2
Document Number: 70684
S-50366—Rev. B, 28-Feb-05
0.00
0
1234
VGS Gate-to-Source Voltage (V)
5
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Si1406DH
www.DaVtaSisheheta4Uy.coSmiliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.2
30
0.1
0.0
ID = 250 mA
25
20
0.1
15
0.2
10
Single Pulse Power
0.3
5
0.4
50 25
2
0 25 50 75 100 125 150
TJ Temperature (_C)
0
0.001
0.01
0.1 1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
10
100 600
0.2
0.1
0.1
0.05
0.02
0.01
104
2
Notes:
PDM
Single Pulse
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=100_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
103
102
101
1
Square Wave Pulse Duration (sec)
10
Normalized Thermal Transient Impedance, Junction-to-Foot
100 600
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
104
103
102
101
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70684.
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Document Number: 70684
S-50366—Rev. B, 28-Feb-05



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