SI1403BDL Datasheet PDF - Vishay Siliconix

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SI1403BDL
Vishay Siliconix

Part Number SI1403BDL
Description P-Channel 2.5-V (G-S) MOSFET
Page 6 Pages


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P-Channel 2.5-V (G-S) MOSFET
Si1403BDL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.150 at VGS = - 4.5 V
- 20 0.175 at VGS = - 3.6 V
0.265 at VGS = - 2.5 V
ID (A)
- 1.5
- 1.4
- 1.2
Qg (Typ)
2.9
FEATURES
• TrenchFET® Power MOSFET
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
OD XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
VDS - 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
- 1.5
- 1.2
- 1.4
- 1.0
Pulsed Drain Current
IDM - 5
Continuous Diode Current (Diode Conduction)a
IS
- 0.8
- 0.8
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
0.625
0.400
0.568
0.295
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t5s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
165
180
105
Maximum
200
220
130
Unit
°C/W
Document Number: 73253
S-71951-Rev. B, 10-Sep-07
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 1.5 A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 3.6 V, ID = - 1.4 A
VGS = - 2.5 V, ID = - 0.8 A
Forward Transconductancea
gfs VDS = - 10 V, ID = - 1.5 A
Diode Forward Voltagea
VSD IS = - 0.8 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 1.5 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1.0 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 10 Ω
ID - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
IF = - 0.8 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min
- 0.6
-2
Typ Max
- 1.3
± 100
-1
-5
0.120
0.140
0.220
3.4
- 0.8
0.150
0.175
0.265
- 1.1
29
0.65
1.0
9
13
30
28
13
12
4
4.5
20
45
42
20
25
8
Unit
V
nA
µA
A
Ω
S
V
nC
Ω
ns
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4.0
VGS = 5 thru 2.5 V
3.2
4.0
3.2
2.4 2.4
2V
1.6 1.6
TC = - 55 °C
25 °C
125 °C
0.8
0.0
0.0
1.5 V
1, 0.5 V
0.8 1.6 2.4 3.2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4.0
0.8
0.0
0.0
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
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Document Number: 73253
S-71951-Rev. B, 10-Sep-07



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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.40 500
Si1403BDL
Vishay Siliconix
0.32
0.24
0.16
0.08
VGS = 2.5 V
VGS = 3.6 V
VGS = 4.5 V
0.00
0
123
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
VDS = 10 V
ID = 1.5 A
4
4
400
300 Ciss
200
Coss
100
Crss
0
04
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V
ID = 1.5 A
1.4
20
3 1.2
2 1.0
1 0.8
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Qg - Total Gate Charge (nC)
Gate Charge
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.5
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.40
0.35
0.30
0.25
ID = 0.8 A
ID = 1.5 A
0.20
0.15
0.10
0.05
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73253
S-71951-Rev. B, 10-Sep-07
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Si1403BDL
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New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5 10
0.4
0.3 ID = 250 µA
8
0.2 6
0.1
0.0 4
- 0.1
- 0.2
2
- 0.3
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
10-2
10-1
1
10 100
Time (s)
Single Pulse Power, Junction-to-Ambient
10
Limited by
rDS(on)*
1
0.1
0.01
TA = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms
1 s, 100 s, DC
2
1
Duty Cycle = 0.5
0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 180 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73253
S-71951-Rev. B, 10-Sep-07



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SI1403BDL P-Channel 2.5-V (G-S) MOSFET SI1403BDL
Vishay Siliconix
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