S9018LT1 Datasheet PDF - Jiangsu Changjiang

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S9018LT1
Jiangsu Changjiang

Part Number S9018LT1
Description SOT-23 Plastic Rncapsulate Transistors
Page 1 Pages


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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9018LT1 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25)
Collector current
ICM: 0.05
Collector-base voltage
A
V(BR)CBO:
25 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
Test conditions
Ic= 100µA, IE=0
Ic= 0.1mA, IB=0
IE=100µA, IC=0
VCB=20V, IE=0
VCE=15V, IB=0
VEB= 3V, IC=0
VCE=5V, IC= 1mA
IC=10mA, IB= 1mA
IC=10mA, IB= 1mA
MIN TYP
25
18
4
70
MAX UNIT
V
V
V
0.1 µA
0.1 µA
0.1 µA
190
0.5 V
1.4 V
Transition frequency
VCE=5V, IC= 5mA
fT
f=400MHz
600
MHz
DEVICE MARKING
S9018LT1= J8



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