RJK0216DPA Datasheet PDF - Renesas Technology

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RJK0216DPA
Renesas Technology

Part Number RJK0216DPA
Description Silicon N Channel Power MOS FET
Page 11 Pages


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Preliminary Datasheet
RJK0216DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
R07DS0208EJ0110
Rev.1.10
Sep 05, 2011
Applications
DC-DC conversion for PC and Server.
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DD-A
(Package name: WPAK-D(2))
5 678
1
G1
234
D1 D1 D1
8
G2
4 32 1
MOS1
9
S1/D2
5678
9
S2 S2 S2
56 7
4321
(Bottom View)
MOS2 and
Schottky Barrier Diode
1, 8 Gate
2, 3, 4, 9 Drain
5, 6, 7, 9 Source
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50 
3. Tc=25C
MOS1
25
±20
15
60
15
5
3.1
10
150
–55 to +150
Ratings
MOS2
25
±20
32
128
32
10
12.5
20
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0208EJ0110 Rev.1.10
Sep 05, 2011
Page 1 of 10



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RJK0216DPA
Electrical Characteristics
• MOS1
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
25
1.2
Preliminary
Typ
7.6
10.5
30
810
130
74
1.2
6.2
2.8
1.9
7.3
5.3
33.9
5.4
0.84
20
Max
±0.1
1
2.5
9.2
13.7
1130
2.4
1.10
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 25 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 7.5 A, VGS = 10 V Note4
ID = 7.5 A, VGS = 4.5 V Note4
ID = 7.5 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 4.5 V
ID = 15 A
VGS =10 V, ID = 7.5 A
VDD 10 V
RL = 1.33
Rg = 4.7
IF = 15 A, VGS = 0 Note4
IF =15 A, VGS = 0
diF/ dt = 100 A/s
R07DS0208EJ0110 Rev.1.10
Sep 05, 2011
Page 2 of 10



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RJK0216DPA
Preliminary
• MOS2
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
trr
Min
25
1.2
Typ
3.6
5.7
50
1600
310
170
1.7
11.6
5.1
3.6
9.6
5.3
38.9
5.9
0.39
20
Max
±0.1
1
2.5
4.4
7.4
2240
3.4
Unit
V
A
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 25 V, VGS = 0
VDS = 10 V, I D =1 mA
ID =16 A, VGS = 10 V Note4
ID = 16 A, VGS = 4.5 V Note4
ID = 16 A, VDS = 5 V Note4
VDS = 10 V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 4.5 V
ID = 32 A
VGS = 10 V, ID = 16 A
VDD 10 V
RL = 0.63
Rg = 4.7
IF = 2 A, VGS = 0 Note4
IF = 32 A, VGS = 0
diF/ dt = 100 A/s
R07DS0208EJ0110 Rev.1.10
Sep 05, 2011
Page 3 of 10



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RJK0216DPA
Main Characteristics
• MOS1
Power vs. Temperature Derating
16
12
8
4
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
4.5 V
10 V
16
3.3 V
Pulse Test
3.2 V
12
8 3.0 V
4
VGS = 2.8 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Pulse Test
150
100
ID = 10 A
50 5 A
2A
0 5 10 15 20
Gate to Source Voltage VGS (V)
R07DS0208EJ0110 Rev.1.10
Sep 05, 2011
Preliminary
Maximum Safe Operation Area
1000
100
10
10 ms
1
100
ms
10
μs
μs
1
Operation in DC
this area is
limited by RDS(on)
Operation
Tc = 25 °C
0.1 1 shot Pulse
0.1 1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 5 V
Pulse Test
16
12
8
4 Tc = 75°C 25°C
–25°C
0
12
34
5
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
VGS = 4.5 V
10
10 V
3
1
0.1 0.3 1 3 10 30
Drain Current ID (A)
100
Page 4 of 10



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