RHRP840 Datasheet PDF - Harris

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RHRP840
Harris

Part Number RHRP840
Description 400V - 600V Hyperfast Diodes
Page 4 Pages


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SEMICONDUCTOR
RHRP840, RHRP850,
RHRP860
April 1995
8A, 400V - 600V Hyperfast Diodes
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . .+175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
RHRP840, RHRP850 and RHRP860 (TA49059) are hyper-
fast diodes with soft recovery characteristics (tRR < 30ns).
They have half the recovery time of ultrafast diodes and are
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRP840
TO-220AC
RHRP840
RHRP850
TO-220AC
RHRP850
RHRP860
TO-220AC
RHRP860
NOTE: When ordering, use the entire part number.
Package
CATHODE
(FLANGE)
Symbol
JEDEC TO-220AC
ANODE
CATHODE
K
A
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RHRP840
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = +150oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
400
400
400
8
16
100
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
75
20
-65 to +175
RHRP850
500
500
500
8
16
100
75
20
-65 to +175
RHRP860
600
600
600
8
UNITS
V
V
V
A
16 A
100 A
75
20
-65 to +175
W
mj
oC
Copyright © Harris Corporation 1995
7-54
File Number 3668.1



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Specifications RHRP840, RHRP850, RHRP860
Electrical Specifications TC = +25oC, Unless Otherwise Specified
RHRP840
RHRP850
RHRP860
SYMBOL
TEST CONDITION
MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
VF IF = 8A, TC = +25oC
-
IF = 8A, TC = +150oC
-
IR VR = 400V, TC = +25oC
-
VR = 500V, TC = +25oC
-
VR = 600V, TC = +25oC
-
IR VR = 400V, TC = +150oC -
VR = 500V, TC = +150oC
-
VR = 600V, TC = +150oC
-
- 2.1 -
- 1.7 -
- 100 -
---
---
- 500 -
---
---
- 2.1 -
- 1.7 -
---
- 100 -
---
---
- 500 -
---
- 2.1 V
- 1.7 V
- - µA
- - µA
- 100 µA
- - µA
- - µA
- 500 µA
tRR IF = 1A, dIF/dt = 100A/µs
-
- 30 -
- 30 -
- 30 ns
IF = 8A, dIF/dt = 100A/µs
-
- 35 -
- 35 -
- 35 ns
tA IF = 8A, dIF/dt = 100A/µs - 16 -
- 16 -
- 16 -
ns
tB IF = 8A, dIF/dt = 100A/µs - 11 -
- 11 -
- 11 -
ns
QRR
IF = 8A, dIF/dt = 100A/µs
-
26
-
- 26 -
- 26 - nC
CJ
RθJC
VR = 10V, IF = 0A
- 25 -
- -2
- 25 -
- -2
- 25 - pF
- - 2 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figure 10 and Figure 11).
pw = Pulse width.
D = Duty cycle.
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
L1 = SELF INDUCTANCE OF
R4 + LLOOP
R1
Q1
+ V1
0
t2
t1
R2
0
-V2
t3
Q3
R3
+ V3
Q2
t1 5tA(MAX)
t2 > tRR
t3 > 0
L1 tA(MIN)
R4 10
L LOOP
Q4 DUT
C1
- V4
R4
dIF
IF dt
0
tRR
tA tB
0.25 IRM
IRM
VRM
VR
FIGURE 1. tRR TEST CIRCUIT
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
7-55



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RHRP840, RHRP850, RHRP860
Typical Performance Curves
40 1000
+ 175oC
100
10
10 +100oC
+175oC +100oC +25oC
1
0.1 +25oC
1
0.5
0
0.5
1 1.5 2 2.5
VF , FORWARD VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
3
0.01
0
100 200
300 400
500 600
VR, REVERSE VOLTAGE (V)
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
TC = +25oC
TC = +100oC
40 75
30
tRR
20
tA
10 tB
60
tRR
45
30 tB
15 tA
0
0.5 1
48
IF , FORWARD CURRENT (A)
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +25oC
0
0.5
1
48
IF, FORWARD CURRENT (A)
FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +100oC
TC = +175oC
150
125
100 tRR
75
50
25
0
0.5
tB
tA
1
48
IF , FORWARD CURRENT (A)
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +175oC
10
8
DC
6
SQ. WAVE
4
2
0
125 135 145 155 165 175
TC , CASE TEMPERATURE (oC)
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
7-56



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RHRP840, RHRP850, RHRP860
Typical Performance Curves (Continued)
60
50
40
30
20
10
0
0 50 100 150 200
VR , REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
IMAX = 1A
L = 40mH
R < 0.1
EAVL = 1/2LI2[VAVL/(VAVL - VDD)]
Q1 AND Q2 ARE 1000V MOSFETS
Q1
R
L
130
12V Q2
130
1M
DUT
+
VDD
CURRENT -
SENSE
IV
t0
VAVL
IL
t1 t2
t
12V
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
7-57



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