Part Number | RA07N4047M |
Manufacturer | Mitsubishi Electric Semiconductor |
Title | MITSUBISHI RF MOSFET MODULE |
Description | The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz range. The battery can be... |
Features |
• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V) • Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW • ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear op... |
Published | Apr 16, 2005 |
Datasheet | RA07N4047M File |
Part Number | RA07N4047M-E01 |
Manufacturer | Mitsubishi Electric Semiconductor |
Title | MITSUBISHI RF MOSFET MODULE |
Description | The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz range. The battery can be. |
Features |
• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V) • Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW • ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear op. |
Datasheet | RA07N4047M-E01 File |
Part Number | RA07N4047M-01 |
Manufacturer | Mitsubishi Electric Semiconductor |
Title | MITSUBISHI RF MOSFET MODULE |
Description | The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz range. The battery can be. |
Features |
• Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=9.6V, VGG=0V) • Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW • ηT>43% @ Pout=7W (V GG control), VDD=9.6V, Pin=20mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear op. |
Datasheet | RA07N4047M-01 File |