QS8J1 Datasheet PDF - Rohm

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QS8J1
Rohm

Part Number QS8J1
Description 1.5V Drive PchPch MOSFET
Page 6 Pages


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Transistors
1.5V Drive Pch+Pch MOSFET
QS8J1
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QS8J1
zStructure
Silicon P-channel MOSFET
zFeatures
1) Low On-resistance.
2) Low voltage drive. (1.5 V)
3) High power package.
zDimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
zApplications
Switching
Abbreviated symbol : J01 Each lead has same dimensions
zPackaging specifications
Type
QS8J1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zInner circuit
(8) (7) (6) (5)
2 2
1 1
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
Total power dissipation
PD 2
Channel temperature
Range of Storage temperature
1 Pw10µs, Duty cycle1%
2 Mounted on a ceramic board
Tch
Tstg
Limits
12
±10
±4.5
±18
1
18
1.5
1.25
150
55 to +150
(1) (2) (3)
1 ESD PROTECTION DIODE
2 BODY DIODE
(4)
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
83.3
100
Unit
°C/W / TOTAL
°C/W / ELEMENT
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Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 µA VGS10V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 12 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 µA VDS= −12V, VGS=0V
Gate threshold voltage
VGS (th) 0.3 − −1.0 V VDS= −6V, ID= −1mA
21 29 mID= −4.5A, VGS= −4.5V
Static drain-source on-state
resistance
RDS
(on)
27 38 mID= −2.2A, VGS= −2.5V
36 54 mID= −2.2A, VGS= −1.8V
Forward transfer admittance
49 98 mID= −0.9A, VGS= −1.5V
Yfs 6.5
S VDS= −6V, ID= −4.5A
Input capacitance
Ciss
2450
pF VDS= −6V
Output capacitance
Coss
320
pF VGS=0V
Reverse transfer capacitance Crss
290
Turn-on delay time
td (on) 12
Rise time
tr 75
Turn-off delay time
td (off)
390
Fall time
tf 215
Total gate charge
Qg 31
Gate-source charge
Qgs 4.5
Gate-drain charge
Qgd 4.0
pF f=1MHz
ns VDD 6V
ns
VGS= −4.5V
ID= −2.2A
ns RL 2.7
ns RG=10
nC VDD 6V
nC
VGS= −4.5V
ID= −4.5A
nC RL 1.3/ RG=10
Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
− −1.2 V IS= −4.5A, VGS=0V
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QS8J1
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Transistors
zElectrical characteristic curves
10
VGS=-10V
Ta=25
8
VGS=-4.5V
VGS=-2.5V
Pulsed
VGS=-1.8V VGS=-1.5V
6
VGS=-1.4V
4
VGS=-1.3V
2 VGS=-1.2V
0
0.0
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE -VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
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QS8J1
10
VGS=-10V
VGS=-1.5V Ta=25
VGS=-1.6V
Pulsed
8
VGS=-1.4V
6
VGS=-1.3V
4
VGS=-1.2V
2
VGS=-1.1V
0
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE -VDS[V]
Fig.2 Typical Output Characteristics(Ⅱ)
10
1
Ta=125
   75
   25
  -25
0.1
VDS= -6V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0
GATE-SOURCE VOLTAGE :- VGS [V]
Fig.3 Typical Transfer Characteristics
1000
Ta=25
Pulsed
100
VGS=-1.5V
VGS=-1.8V
VGS=-2.5V
VGS=-4.5V
1000
VGS= -4.5V
Pulsed
100
Ta=125
Ta= 75
Ta= 25
Ta= -25
1000
VGS= -2.5V
Pulsed
100
Ta=125
Ta= 75
Ta= 25
Ta= -25
10
0.1
1
DRAIN CURRENT : -ID [A]
10
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
10
0.1
1
DRAIN CURRENT : -ID [A]
10
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10
0.1
1
DRAIN CURRENT : -ID [A]
10
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
1000
VGS= -1.8V
Pulsed
100
Ta=125
Ta= 75
Ta= 25
Ta= -25
10
0.1 1 10
DRAIN CURRENT : -ID [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
1000
VGS= -1.5V
Pulsed
100
Ta=125
Ta= 75
Ta= 25
Ta= -25
10
0.1
1
10
DRAIN CURRENT : -ID [A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
100
10
Ta=125
75
1 25
-25
0.1
VGS=0V
Pulsed
0.01
0.0 0.2 0.4 0.6 0.8 1.0
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
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Transistors
80
60 ID= -2.2A
ID= -4.5A
40
20
Ta=25
Pulsed
100
10
1
0
VGS=-6V
Pulsed
Ta= -25
Ta= 25
Ta= 75
Ta= 125
0
0 2 4 6 8 10
GATE-SURCE VOLTAGE : -VGS [V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
0
0.0 0.1 1.0 10.0
DRAIN CURRENT : ID [A]
Fig.11 Forward Transfer Admittance
vs. Drain Current
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QS8J1
4.5
4 Ta=25
VDD= -6V
3.5 ID=-4.5A
3 RG=10
2.5 Pulsed
2
1.5
1
0.5
0
0 5 10 15 20 25 30
TOTAL GATE CHARGE : Qg [nC]
35
Fig.12 Dynamic Input Characteristics
10000
Ta=25
f=1MHz
Ciss VGS=0V
1000
Coss
Crss
100
0.01
0.1
1
10 100
DRAIN-SOURCE VOLTAGE : -VDS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
10000
1000
td(off)
tf
Ta=25
VDD= -6V
VGS=-4.5V
RG=10
Pulsed
100
10
1
0
td(on)
tr
01
DRAIN CURRENT : -ID [A]
10
Fig.14 Switching Characteristics
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