PV1010UDF12B Datasheet PDF - KEC semiconductor

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PV1010UDF12B
KEC semiconductor

Part Number PV1010UDF12B
Description TVS Diode
Page 2 Pages


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SEMICONDUCTOR
TECHNICAL DATA
PV1010UDF12B
ESD/EMI Filter
APPLICATION
I/O ESD protection for mobile handsets, notebook, PDAs, etc.
EMI filtering for data ports in cell phones, PDAs, notebook computers
EMI filtering for LCD, camera and chip-to-chip data lines
FEATURES
EMI/RFI filtering
ESD Protection to IEC 61000-4-2 Level 4
Low insertion loss
Good attenuation of high frequency signals
Low clamping voltage
Low operating and leakage current
Six elements in one package
DESCRIPTION
PV1010UDF12B is an EMI filter array with electrostatic discharge (ESD) protection,
which integrates six pi filters (C-R-C). These parts include ESD protection diodes on
every pin, providing a very high level of protection for sensitive electronic components
that may be subjected to electrostatic discharge.
The PV1010UDF12B provides the recommended line termination while implementing a
low pass filter to limit EMI levels and providing ESD protection which exceeds IEC
61000-4-2 level 4 standard. The UDFN package is a very effective PCB space
occupation and a very thin package (0.4mm Pitch, 0.5mm height)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
DC Power Per Resistor
Power Dissipation
Junction Temperature
Storage Temperature
* Total Package Power Dissipation
SYMBOL
PR
*PD
Tj
Tstg
RATING
100
600
150
-55 150
UNIT
mW
EQUIVALENT CIRCUIT
FILTERn*
100
FILTERn*
10pF
10pF
A
Pin 1
TOP VIEW
C
E
16
GND PAD
12 D 7
BOTTOM VIEW
KL
SIDE VIEW
1,12 : Filter channel 1
2,11 : Filter channel 2
3,10 : Filter channel 3
4,9 : Filter channel 4
5,8 : Filter channel 5
6,7 : Filter channel 6
DIM
A
B
C
D
E
F
G
H
J
K
L
MILLIMETERS
2.50 +_ 0.10
1.35 +_ 0.10
2.00 +_ 0.10
0.20 +_ 0.05
0.40
0.40 +_ 0.10
0.25 +_ 0.10
0.20 Min
0.50 +_ 0.05
0.127
0.02+0.03/-0.02
UDFN-12B
MARKING
Type Name
V2
Lot No.
RECOMMENEDED FOOTPRINT
(dimensions in mm)
0.40
0.30
0.25
1.40
GND
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Cutoff Frequency
Channel Resistance
Line Capacitance
SYMBOL
VRWM
VBR
IR
fc-3dB
RLINE
CLINE
TEST CONDITION
-
It=1mA
VRWM=3.3V
VLine=0V, ZSOURCE=50 , ZLOAD=50
Between Input and Output
VLine=0V DC, 1MHz, Between I/O Pins and GND
VLine=2.5V, 1MHz, Between I/O Pins and GND
MIN.
-
6
-
-
80
24
16
TYP.
-
-
-
150
100
30
20
MAX.
5
-
1.0
-
120
36
24
UNIT
V
V
A
MHz
pF
2009. 6. 3
Revision No : 0
1/2



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PV1010UDF12B
S21 - FREQUENCY
0
-10
-20
-30
-40
1
10 100 1000 6000
FREQUENCY (MHz)
DIODE CAPACITANCE vs. INPUT VOLTAGE
2.0
1.5
1.0
0.5
0.0
012345
DIODE VOLTAGE (V)
0
-30
-60
-90
-120
-150
1
ANALOG CROSSTALK
10 100 1000 6000
FREQUENCY (MHz)
110
108
106
104
102
100
98
96
94
92
90
-40
RLine - TEMPERATURE
-20 0 20 40 60
80
AMBIENT TEMPERATURE Ta ( C )
2009. 6. 3
Revision No : 0
2/2



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