PU3117 Datasheet PDF - Panasonic Semiconductor

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PU3117
Panasonic Semiconductor

Part Number PU3117
Description (PUA3117) Silicon NPN triple diffusion planar type
Page 3 Pages


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Power Transistor Arrays
PUA3117 (PU3117)
Silicon NPN triple diffusion planar type
For power amplification and switching
Features
High forward current transfer ratio hFE
Satisfactory linearity of forward current transfer ratio hFE
NPN 3 elements
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
80
60
6
3
6
1
15
2.4
150
55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
20.2±0.3
Unit: mm
4.0±0.2
0.8±0.25
0.5±0.15
1.0±0.25
2.54±0.2
0.5±0.15
C 1.5±0.5
7 × 2.57 = 17.78±0.25
1: Emitter
2: Base
12345678
3: Collector
4: Base
5: Collector
6: Base
7: Collector
8: Emitter
SIP8-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 25 mA, IB = 0
60
V
Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0
100 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 40 V, IB = 0
100 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
100 µA
Forward current transfer ratio
hFE VCE = 4 V, IC = 0.5 A
500 2 500
Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.05 A
1.0 V
Transition frequency
fT VCE = 12 V, IC = 0.2 A, f = 10 MHz
50 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
35
246
1
7
8
Publication date: April 2003
Note) The part number in the parenthesis shows conventional part number.
SJK00007AED
1



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PUA3117
20
16 (1)
12
PC Ta
(1) TC = Ta
(2) With a 50 × 50 × 2 mm
Al heat sink
(3) With a 50 × 25 × 2 mm
Al heat sink
(4) Without heat sink
8
(2)
(3)
4
(4)
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
1.0
IB = 1.2 mA TC = 25°C
1 mA
0.8
0.7 mA
0.6 mA
0.6
0.5 mA
0.4 mA
0.4
0.3 mA
0.2mA
0.2
0.1 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
5
VCE = 4 V
4 25°C
TC = 100°C
3 25°C
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
hFE IC
fT IC
100
IC / IB = 40
104
VCE = 4 V
104
VCE = 12 V
TC = 25°C
TC = 100°C 25°C
10 103
25°C
TC = 100°C
103
25°C
1 102
102
25°C
0.1 10
10
0.01
0.01
0.1 1
Collector current IC (A)
10
Cob VCB
104
IE = 0
f = 1 MHz
TC = 25°C
103
102
1
0.01 0.1
1
Collector current IC (A)
10
Safe operation area
100
Non repetitve pulse
TC = 25°C (Per circuit)
10 ICP
1
t = 10 ms
t = 1 ms
1
0.01 0.1
1
Collector current IC (A)
10
10 0.1
1
0.1 1 10 100
Collector-base voltage VCB (V)
0.01
1
10 100 1 000
Collector-emitter voltage VCE (V)
2 SJK00007AED



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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL



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