PSMN9R0-25MLC Datasheet PDF - NXP Semiconductors

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PSMN9R0-25MLC
NXP Semiconductors

Part Number PSMN9R0-25MLC
Description MOSFET
Page 14 Pages


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PSMN9R0-25MLC
N-channel 25 V 8.65 mlogic level MOSFET in LFPAK33
using NextPower Technology
Rev. 3 — 15 June 2012
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Conditions
Tj = 25°C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 15 A; Tj = 25 °C;
see Figure 10
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 10
VGS = 4.5 V; ID = 15 A; VDS = 12.5 V;
see Figure 12;
see Figure 13
VGS = 4.5 V; ID = 15 A; VDS = 12.5 V;
see Figure 12;
see Figure 13
Min Typ Max Unit
- - 25 V
- - 55 A
- - 45 W
-55 -
175 °C
- 9.8 11.3 m
- 7.55 8.65 m
- 1.2 - nC
- 5.4 - nC



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NXP Semiconductors
PSMN9R0-25MLC
N-channel 25 V 8.65 mlogic level MOSFET in LFPAK33 using NextPower Technology
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
Simplified outline
S source
S source
S source
G gate
D mounting base; connected to
drain
1234
SOT1210 (LFPAK33)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN9R0-25MLC
LFPAK33
4. Limiting values
Description
Plastic single ended surface mounted package (LFPAK33);
4 leads
Version
SOT1210
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage
Tj = 25°C
VGS gate-source voltage
ID drain current
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
IDM peak drain current
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A;
Vsup 25 V; RGS = 50 ; unclamped;
see Figure 3
Min Max Unit
- 25 V
-20 20 V
- 55 A
- 39 A
- 219 A
- 45 W
-55 175 °C
-55 175 °C
- 260 °C
120 -
V
- 41 A
- 219 A
- 8.7 mJ
PSMN9R0-25MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 June 2012
© NXP B.V. 2012. All rights reserved.
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NXP Semiconductors
PSMN9R0-25MLC
N-channel 25 V 8.65 mlogic level MOSFET in LFPAK33 using NextPower Technology
60
ID
(A)
45
003aaj792
30
15
0
0 50 100 150 200
Tmb(°C)
120
Pder
(%)
80
03na19
40
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
102
IAL
(A)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aaj793
10
(1)
1
10-3
10-2
10-1
(2)
1 10
tAL(ms)
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
PSMN9R0-25MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 June 2012
© NXP B.V. 2012. All rights reserved.
3 of 14



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NXP Semiconductors
PSMN9R0-25MLC
N-channel 25 V 8.65 mlogic level MOSFET in LFPAK33 using NextPower Technology
103
ID
(A)
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
1
DC
10
003aaj794
tp =10 μs
100 μs
1 ms
10 ms
100 ms
VDS(V)
102
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see Figure 5
Min Typ Max Unit
- 3.1 3.32 K/W
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1
0.02
003aaj795
P
δ=
tp
T
single shot
tp t
10-2
T
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN9R0-25MLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 15 June 2012
© NXP B.V. 2012. All rights reserved.
4 of 14



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