PSMN7R0-100PS Datasheet PDF - NXP

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PSMN7R0-100PS
NXP

Part Number PSMN7R0-100PS
Description N-channel 100V 6.8 MOhm Standard Level MOSFET
Page 16 Pages


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PSMN7R0-100PS
N-channel
100V
6.8
m
standard
level
www.DataSheet4U.com
MOSFET in TO220
Rev. 02 — 7 January 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
1.3 Applications
„ DC-to-DC converters
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS drain-source voltage Tj 25 °C; Tj 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
Dynamic characteristics
VGS = 10 V; Tj(init) = 25 °C;
ID = 100 A; Vsup = 100 V;
unclamped; RGS = 50
QGD
gate-drain charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 14
and 17
QG(tot) total gate charge
VGS = 10 V; ID = 25 A;
VDS = 50 V; see Figure 17
and 14
Min Typ Max Unit
- - 100 V
[1] - - 100 A
- - 269 W
-55 -
175 °C
- - 315 mJ
- 36 - nC
- 125 - nC



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NXP Semiconductors
PSMN7R0-100PS
N-channel 100V 6.8 mstandard levwewl wM.ODaStaFSEhTeeint4UT.Oco2m20
Table 1. Quick reference …continued
Symbol Parameter
Conditions
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A;
Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A;
Tj = 25 °C; see Figure 13
[1] Continuous current is limited by package
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1G
gate
2D
drain
3S
source
mb D
mounting base; connected to
drain
Simplified outline
mb
Min Typ Max Unit
- - 12 m
- 5.4 6.8 m
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN7R0-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
PSMN7R0-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
© NXP B.V. 2010. All rights reserved.
2 of 16



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NXP Semiconductors
PSMN7R0-100PS
N-channel 100V 6.8 mstandard levwewl wM.ODaStaFSEhTeeint4UT.Oco2m20
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
IDM
Ptot
Tstg
Tj
Tsld(M)
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
Conditions
Tj 25 °C; Tj 175 °C
Tj 175 °C; Tj 25 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C;
tp 10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
drain-source avalanche Vsup = 100 V; unclamped; RGS = 50
energy
[1] Continuous current is limited by package
150
ID
(A)
100
(1)
003aad558
120
Pder
(%)
80
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 85 A
[1] -
100 A
- 475 A
- 269 W
-55 175 °C
-55 175 °C
- 260 °C
[1] -
-
-
100 A
475 A
315 mJ
03aa16
50 40
0
0 50 100 150 200
Tmb (°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN7R0-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
© NXP B.V. 2010. All rights reserved.
3 of 16



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NXP Semiconductors
PSMN7R0-100PS
N-channel 100V 6.8 mstandard levwewl wM.ODaStaFSEhTeeint4UT.Oco2m20
103
ID
(A)
Limit RDSon = VDS/ ID
102
10
1
10-1
1
DC
10
tp = 10 μ s
100 μ s
003aad559
1 ms
10 ms
100 ms
102
VDS(V)
103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN7R0-100PS_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 January 2010
© NXP B.V. 2010. All rights reserved.
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