PSMN6R5-25YLC Datasheet PDF - NXP Semiconductors

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PSMN6R5-25YLC
NXP Semiconductors

Part Number PSMN6R5-25YLC
Description N-channel 25V 6.5m ohm logic level MOSFET
Page 15 Pages


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PSMN6R5-25YLC
N-channel 25 V 6.5 mlogic level MOSFET in LFPAK using
NextPower technology
Rev. 1 — 12 July 2011
Objective data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package,
qualified to 175°C
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD, and QOSS for
high system efficiencies at low and
high loads
1.3 Applications
DC-to-DC converters
Load switching
Synchronous buck regulator
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
Conditions
25 °C Tj 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 25 V
- - 64 A
--
-55 -
48 W
175 °C
VGS = 4.5 V; ID = 20 A;
Tj = 25 °C; see Figure 12
VGS = 10 V; ID = 20 A;
Tj = 25 °C; see Figure 12
- 7.3 8.5 m
- 5.5 6.5 m
VGS = 4.5 V; ID = 20 A;
- 2.8 - nC
VDS = 12 V; see Figure 14; - 8.4 - nC
see Figure 15



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NXP Semiconductors
PSMN6R5-25YLC
N-channel 25 V 6.5 mlogic level MOSFET in LFPAK using NextPower technology
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S source
S source
S source
G gate
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
1234
SOT669 (LFPAK; Power-SO8)
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN6R5-25YLC LFPAK; Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
PSMN6R5-25YLC
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
PSMN6R5-25YLC
N-channel 25 V 6.5 mlogic level MOSFET in LFPAK using NextPower technology
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Conditions
25 °C Tj 175 °C
25 °C Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 25 °C; see Figure 1
VGS = 10 V; Tmb = 100 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C;
see Figure 4
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tsld(M)
peak soldering temperature
VESD
electrostatic discharge voltage
Source-drain diode
Tmb = 25 °C; see Figure 2
MM (JEDEC JESD22-A115)
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 64 A;
Vsup 25 V; unclamped; RGS = 50 ;
see Figure 3
Min Max Unit
- 25 V
- 25 V
-20 20 V
- 64 A
- 45 A
- 256 A
- 48 W
-55 175 °C
-55 175 °C
- 260 °C
240 -
V
- 44 A
- 256 A
- 18 mJ
80
ID
(A)
60
40
20
003aag135
120
Pder
(%)
80
40
03na19
0
0 50 100 150 200
Tmb(°C)
0
0 50 100 150 200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN6R5-25YLC
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
PSMN6R5-25YLC
N-channel 25 V 6.5 mlogic level MOSFET in LFPAK using NextPower technology
102
IAL
(A)
10
003aag136
(1)
(2)
1
10-3
10-2
10-1
1 10
tAL (ms)
Fig 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
103
ID
(A)
102
10
1
10-1
Limit RDSon = VDS/ ID
DC
003aag137
tp =10 μ s
100 μ s
1 ms
10 ms
100 ms
10-2
10-1 1 10 102
VDS(V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN6R5-25YLC
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2011
© NXP B.V. 2011. All rights reserved.
4 of 15



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NXP Semiconductors
PSMN6R5-25YLC pdf

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