PSKD26 Datasheet PDF - Powersem


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PSKD26
Powersem

Part Number PSKD26
Description Diode Module
Page 3 Pages

PSKD26 datasheet pdf
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Diode Modules
Preliminary Data Sheet
PSKD 26
IFRMS
IFAVM
VRRM
= 2x 60 A
= 2x 36 A
= 800-1800 V
VRSM
V
900
1300
1500
1700
1900
VRRM
V
800
1200
1400
1600
1800
Type
PSKD 26/08
PSKD 26/12
PSKD 26/14
PSKD 26/16
PSKD 26/18
312
TO-240 AA
3
2
1
Symbol
IFRMS
IFAVM
IFSM
i2dt
TVJ
TVJM
Tstg
VISOL
Md
Weight
Test Conditions
TVJ = TVJM
TC = 100°C; 180° sine
TVJ = 45°C;
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 45°C
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50/60 Hz, RMS
t = 1 min
IISOL 1 mA
t=1s
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
Maximum Ratings
60 A
36 A
650 A
760 A
580 A
630 A
2100
2400
1700
1900
A2s
A2s
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
2.5-4/22-35 Nm/lb.in.
2.5-4/22-35 Nm/lb.in.
90 g
Symbol
Test Conditions
IR TVJ = TVJM; VR = VRRM
VF IF = 80 A; TVJ = 25°C
VT0 For power-loss calculations only
rT TVJ = TVJM
QS TVJ = 125°C; IF = 25 A, -di/dt = 0.6 A/µs
IRM
RthJC
per diode; DC current
per module
other values
RthJK
per diode; DC current
see Fig. 6/7
www.DataSheet4Up.ceor mmodule
dS Creepage distance on surface
dA Strike distance through air
a Maximum allowable acceleration
Characteristic Values
10 mA
1.38 V
0.8 V
6.1 m
50 µC
6A
1.0 K/W
0.5 K/W
1.2 K/W
0.6 K/W
12.7 m m
9.6 m m
50 m/s2
Features
International standard package
JEDEC TO-240 AA
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20



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Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
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Circuit
B2
2 x PSKD 26
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20



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Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3 x PSKD 26
Fig. 6 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJC (K/W)
1.00
1.02
1.04
1.07
1.10
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.01
0.0012
2 0.03
0.095
3 0.96
0.455
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Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJK (K/W)
1.20
1.22
1.24
1.27
1.30
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1 0.01
0.0012
2 0.03
0.095
3 0.96
0.455
4 0.2
0.495
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20




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