PSKD255 Datasheet PDF - Powersem


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PSKD255
Powersem

Part Number PSKD255
Description Diode Module
Page 3 Pages

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Diode Modules
Preliminary Data Sheet
VRSM
V
900
1300
1500
1700
1900
VRRM
V
800
1200
1400
1600
1800
Type
PSKD 255/08
PSKD 255/12
PSKD 255/14
PSKD 255/16
PSKD 255/18
PSKD 255
312
IFRMS
IFAVM
VRRM
= 2x 450 A
= 2x 270 A
= 800-1800 V
3
2
1
Symbol
Test Conditions
Maximum Ratings
IFRMS
IFAVM
IFSM
i2dt
TVJ
TVJM
Tstg
VISOL
Md
Weight
TVJ = TVJM
TC = 100°C; 180° sine
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
50/60 Hz, RMS
t = 1 min
IISOL 1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M8)
Typical including screws
450 A
270 A
9500
10200
A
A
8400
9000
A
A
451 000
437 000
A2s
A2s
353 000
340 000
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
4.5-7/40-62 Nm/lb.in.
11-13/97-115 Nm/lb.in.
750 g
Symbol
IRRM
VF
VT0
rT
RthJC
RthJK
Test Conditions
TVJ = TVJM; VR = VRRM
IF = 600 A; TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
per diode; DC current
per module
per diode; DC current
per module
other values
see PSKT 255
Characteristic Values
30 mA
1.4 V
0.8 V
0.6 m
0.140
0.07
0.18
0.09
K/W
K/W
K/W
K/W
wwwQ.DSataSheet4U.TcVoJm= 125°C; IF = 400 A; -di/dt = 50 A/µs
IRM
dS Creeping distance on surface
dA Creepage distance in air
a Maximum allowable acceleration
700
260
12.7
9.6
50
µC
A
mm
mm
m/s2
Features
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
M8x20
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20



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10000
IFSM A
8000
6000
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 150°C
4000
2000
0
0.001
0.01
0.1 s
t
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
1
500
Ptot W
400
300
DC
200 180° sin
120°
60°
30°
100
106
I2t VR = 0V
A2s
500
A
450
IFAVM 400
350
DC
180° sin
120°
60°
30°
TVJ = 45°C
300
250
TVJ = 150°C
200
150
100
50
105
1 ms 10
t
Fig. 2 I2t versus time (1-10 ms)
0
0 25 50 75 100 125 °C 150
TC
Fig. 3 Maximum forward current
at case temperature
RthKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.2
Fig. 4 Power dissipation versus
forward current and ambient
temperature (per diode)
0
0 100 200 300 400 A 0
IFAVM
25 50 75 100 1°2C5 150
TA
1500
Ptot
W
1250
1000
750
500
www.D2a5t0aSheet4U.com
RL
CCiirrccuuiitt
BB22UU
22xxPMSKDDD225555
RthKA K/W
0.06
0.08
0.1
0.15
0.2
0.3
0.5
0
0 100 200 300 400 500 A 0
IdAVM
25 50 75 100 1°2C5 150
TA
Fig. 5 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20



No Preview Available !

2500
W
Ptot 2000
1500
1000
500
CCirirccuuitit
BB66UU
33xxPSMKDDD22555
RthKA K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
0
0 200 400 600 800 A 0
IdAVM
25 50 75 100 125 °C 150
TA
0.25 Fig. 7 Transient thermal impedance
K/W junction to case (per diode)
0.20 RthJC for various conduction angles d:
ZthJC
0.15
0.10
0.05
d RthJC (K/W)
DC 0.139
180°
0.148
30°
120°
0.156
60° 60° 0.176
120°
180°
30° 0.214
DC
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
0.00
1
0.0066
0.00054
10-3
10-2
10-1
100
101 s
102
2
0.0358
0.098
t
3
0.0831
0.54
4
0.0129
12
0.30 Fig. 8 Transient thermal impedance
K/W junction to heatsink (per diode)
0.25
ZthJK
0.20
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.179
0.15
180°
0.188
120°
0.196
0.10
30°
60°
120°
60° 0.216
30° 0.254
180°
0.05 DC Constants for ZthJK calculation:
www.DataSheet4U.com
i
Rthi (K/W)
ti (s)
0.00
1
0.0066
0.00054
10-3
10-2
10-1
100
101 s
102
2
0.0358
0.098
t
3
0.0831
0.54
4
0.0129
12
5 0.04
12
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20




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