PSKD172 Datasheet PDF - Powersem


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PSKD172
Powersem

Part Number PSKD172
Description Fast Recovery Epitaxial Diode (FRED) Module
Page 3 Pages

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Diode Modules
Preliminary Data Sheet
PSKD 172
IFRMS
IFAVM
VRRM
= 2x 300 A
= 2x 190 A
= 800-1800 V
VRSM
V
900
1300
1500
1700
1900
VRRM
V
800
1200
1400
1600
1800
Type
PSKD 172/08
PSKD 172/12
PSKD 172/14
PSKD 172/16
PSKD 172/18
312
3
2
1
Symbol
IFRMS
IFAVM
IFSM
i2dt
TVJ
TVJM
Tstg
VISOL
Md
Weight
Test Conditions
TVJ = TVJM
TC = 100°C; 180° sine
TVJ = 45°C;
VR = 0
TVJ = TVJM
VR = 0
TVJ = 45°C
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
300 A
190 A
6600
7290
5600
6200
A
A
A
A
218 000
221 000
157 000
160 000
A2s
A2s
A2s
A2s
-40...+150
150
-40...+125
°C
°C
°C
50/60 Hz, RMS
t = 1 min
IISOL 1 mA
t=1s
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
3000
3600
V~
V~
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
120 g
Features
International standard package
Direct copper bonded Al2O3 -ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
Symbol
Test Conditions
IR TVJ = TVJM; VR = VRRM
VF IF = 300 A; TVJ = 25°C
VT0 For power-loss calculations only
rT TVJ = TVJM
QS TVJ = 125°C; IF = 300 A, -di/dt = 50 A/µs
IRM
RthJC
per diode; DC current
wwwR.DthJaKtaSheet4U.ppceeorrmdmiooddeu;leDC current
per module
other values
see Fig. 6/7
dS Creepage distance on surface
dA Strike distance through air
a Maximum allowable acceleration
Characteristic Values
20 mA
1.15 V
0.8 V
0.8 m
550 µC
235 A
0.21
0.105
0.31
0.155
K/W
K/W
K/W
K/W
12.7 m m
9.6 m m
50 m/s2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20



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Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
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Circuit
B2
2 x PSKD 172
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20



No Preview Available !

Circuit
B6
3 x PSKD 172
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJC (K/W)
0.210
0.223
0.233
0.260
0.295
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.0087
0.001
2
0.0163
0.065
3 0.185
0.4
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Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d
DC
180°
120°
60°
30°
RthJK (K/W)
0.31
0.323
0.333
0.360
0.395
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
0.0087
0.001
2
0.0163
0.065
3 0.185
0.4
4 0.1
1.29
POWERSEM GmbH, Walpersdorfer Str. 53
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20




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