PMPB12UN Datasheet PDF - NXP Semiconductors

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PMPB12UN
NXP Semiconductors

Part Number PMPB12UN
Description 20V single N-channel Trench MOSFET
Page 15 Pages


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PMPB12UN
20 V single N-channel Trench MOSFET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Trench MOSFET technology
Very fast switching
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 11.3 A
- 14 18 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMPB12UN
20 V single N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
Simplified outline
16
7
25
Graphic symbol
D
G
384
Transparent top view
DFN2020MD-6 (SOT1220)
S
017aaa253
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
PMPB12UN
DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1220
4. Marking
Table 4. Marking codes
Type number
PMPB12UN
Marking code
1F
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
PMPB12UN
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 July 2012
[1]
[1]
[1]
[1]
Min Max Unit
- 20 V
-8 8
V
- 11.3 A
- 7.9 A
- 5A
- 31 A
- 1.7 W
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
PMPB12UN
20 V single N-channel Trench MOSFET
Symbol
Parameter
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Conditions
Tamb = 25 °C; t ≤ 5 s
Tsp = 25 °C
Tamb = 25 °C
Min Max Unit
[1] -
3.5 W
- 12.5 W
-55 150 °C
-55 150 °C
-65 150 °C
[1] -
1.8 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
120
017aaa123
120
017aaa124
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
PMPB12UN
Product data sheet
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6 July 2012
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
PMPB12UN
20 V single N-channel Trench MOSFET
102
ID
(A)
10
1
Limit RDSon = VDS/ID
017aaa613
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC; Tsp = 25 °C
tp = 100 ms
10-1
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
10-2
10-2
IDM = single pulse
10-1
1
10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
235 270 K/W
[2] -
67 74 K/W
[3] -
33 36 K/W
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s
PMPB12UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
4 / 15



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