PMF63UN Datasheet PDF - NXP Semiconductors

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PMF63UN
NXP Semiconductors

Part Number PMF63UN
Description single N-channel Trench MOSFET
Page 15 Pages


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PMF63UN
20 V, single N-channel Trench MOSFET
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t 5 s
VGS = 4.5 V; ID = 1.8 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.9 A
- 63 74 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT323 (SC-70)
Graphic symbol
D
G
S
017aaa253



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NXP Semiconductors
PMF63UN
20 V, single N-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMF63UN
SC-70
4. Marking
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Table 4. Marking codes
Type number
PMF63UN
[1] % = placeholder for manufacturing site code
5. Limiting values
Marking code[1]
V8%
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C
Tamb = 25 °C
[1]
[1]
[1]
[2]
[1]
[1]
Min Max
- 20
-8 8
- 1.9
- 1.8
- 1.1
- 7.2
- 275
- 350
- 1785
-55 150
-55 150
-65 150
- 0.8
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Unit
V
V
A
A
A
A
mW
mW
mW
°C
°C
°C
A
PMF63UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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120
Pder
(%)
80
017aaa123
PMF63UN
20 V, single N-channel Trench MOSFET
120
Ider
(%)
80
017aaa124
40 40
0
75 25
25
75 125 175
Tj (°C)
0
75 25
25
75 125 175
Tj (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
10
ID
(A)
Limit RDSon = VDS/ID
1
Fig 2. Normalized continuous drain current as a
function of junction temperature
017aaa444
(1)
(2)
10-1
(3)
(4)
(5)
(6)
10-2
10-1
1
10 102
VDS (V)
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMF63UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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NXP Semiconductors
PMF63UN
20 V, single N-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
395 455 K/W
[2] -
308 355 K/W
[3] -
263 305 K/W
- 60 70 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t 5 s.
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
0.02
0.01
10
017aaa445
10-1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMF63UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
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