PMEG6030EVP Datasheet PDF - NXP Semiconductors

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PMEG6030EVP
NXP Semiconductors

Part Number PMEG6030EVP
Description Schottky barrier rectifier
Page 13 Pages


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PMEG6030EVP
High-temperature 60 V, 3 A Schottky barrier rectifier
4 March 2013
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Average forward current: IF(AV) ≤ 3 A
Reverse voltage: VR ≤ 60 V
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature Tj ≤ 175 °C
3. Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
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Reverse polarity protection
Low power consumption application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tsp ≤ 165 °C;
square wave
Tj = 25 °C
IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
Tj = 25 °C; VR = 60 V; pulsed
Min Typ Max Unit
- - 3A
- - 60 V
- 420 475 mV
- 115 400 µA
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NXP Semiconductors
PMEG6030EVP
High-temperature 60 V, 3 A Schottky barrier rectifier
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K cathode[1]
A anode
Simplified outline
12
SOD128
[1] The marking bar indicates the cathode.
Graphic symbol
1
2
sym001
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMEG6030EVP
SOD128
Description
plastic surface-mounted package; 2 leads
Version
SOD128
7. Marking
Table 4. Marking codes
Type number
PMEG6030EVP
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Marking code
DB
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR reverse voltage
Tj = 25 °C
IF forward current
Tsp = 160 °C
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 95 °C;
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 165 °C;
square wave
IFSM
non-repetitive peak forward
tp = 8 ms; Tj(init) = 25 °C; square wave
current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj junction temperature
[1]
[2]
[3]
[1]
PMEG6030EVP
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 March 2013
Min Max Unit
- 60 V
- 4.2 A
- 3A
- 3A
- 70 A
- 750 mW
- 1250 mW
- 2500 mW
- 175 °C
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NXP Semiconductors
PMEG6030EVP
High-temperature 60 V, 3 A Schottky barrier rectifier
Symbol
Tamb
Tstg
Parameter
ambient temperature
storage temperature
Conditions
Min Max Unit
-55 175 °C
-65 175 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1][2] - - 200 K/W
[1][3] - - 120 K/W
[1][4] - - 60 K/W
[5] - - 12 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
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[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
103
Zth(j-a)
(K/W)
102
10
1
duty cycle =
1 0.75
0.5
0.25
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab688
10- 1
10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103
tp (s)
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6030EVP
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 March 2013
© NXP B.V. 2013. All rights reserved
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NXP Semiconductors
PMEG6030EVP
High-temperature 60 V, 3 A Schottky barrier rectifier
103
Zth(j-a)
(K/W)
102
10
1
duty cycle =
1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02 0.01
0
006aab689
10- 1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for cathode 1 cm2
1
10 102 103
tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
duty cycle =
1 0.75
0.5
0.33
0.25
0.2
0.1
0.05
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006aab690
1 0.02 0.01
0
10- 1
10- 3
10- 2
10- 1
Ceramic PCB, Al2O3, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
VF
Characteristics
Parameter
forward voltage
PMEG6030EVP
Product data sheet
Conditions
IF = 0.1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
IF = 0.5 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C; pulsed
All information provided in this document is subject to legal disclaimers.
4 March 2013
Min Typ Max Unit
- 275 310 mV
- 325 - mV
- 355 400 mV
© NXP B.V. 2013. All rights reserved
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