PMEG6020ETP Datasheet PDF - NXP Semiconductors

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PMEG6020ETP
NXP Semiconductors

Part Number PMEG6020ETP
Description Schottky barrier rectifier
Page 13 Pages


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PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
11 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Average forward current: IF(AV) ≤ 2 A
Reverse voltage: VR ≤ 60 V
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature Tj ≤ 175 °C
1.3 Applications
Low voltage rectification
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High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF
IF(AV)
Quick reference data
Parameter
forward current
average forward
current
VR reverse voltage
VF forward voltage
IR reverse current
Conditions
Tsp = 165 °C
δ = 0.5 ; f = 20 kHz; Tamb ≤ 120 °C;
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;
square wave
Tj = 25 °C
IF = 2 A; Tj = 25 °C
Tj = 25 °C; VR = 60 V; tp ≤ 300 µs;
δ ≤ 0.02 ; pulsed
Min Typ Max Unit
- - 2.8 A
[1] - - 2 A
- - 2A
- - 60 V
- 460 530 mV
- 60 150 µA
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
Symbol
trr
Parameter
Conditions
reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
Min Typ Max Unit
- 8.6 - ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 K cathode[1]
2 A anode
Simplified outline
12
SOD128
[1] The marking bar indicates the cathode.
Graphic symbol
1
2
sym001
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMEG6020ETP
SOD128
Description
plastic surface-mounted package; 2 leadshttp://www.DataSheet4U.net/
Version
SOD128
4. Marking
Table 4. Marking codes
Type number
PMEG6020ETP
Marking code
D9
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR reverse voltage
Tj = 25 °C
IF forward current
Tsp = 165 °C
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 120 °C;
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 170 °C;
square wave
IFSM
non-repetitive peak forward
tp = 8 ms; Tj(init) = 25 °C; square wave
current
PMEG6020ETP
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 October 2012
[1]
Min Max Unit
- 60 V
- 2.8 A
- 2A
- 2A
- 50 A
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
Symbol
Ptot
Tj
Tamb
Tstg
Parameter
total power dissipation
Conditions
Tamb ≤ 25 °C
junction temperature
ambient temperature
storage temperature
Min Max Unit
[2] -
750 mW
[3] -
1250 mW
[1] -
2500 mW
- 175 °C
-55 175 °C
-65 175 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
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Min Typ Max Unit
[1][2] - - 200 K/W
[1][3] - - 120 K/W
[1][4] - - 60 K/W
[5] - - 12 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02 0.01
1
0
006aab678
10- 1
10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103
tp (s)
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6020ETP
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 October 2012
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
PMEG6020ETP
High-temperature 60 V, 2 A Schottky barrier rectifier
103
Zth(j-a)
(K/W)
102
10
1
duty cycle =
1
0.75
0.5 0.33
0.25
0.2
0.1
0.05
0.02 0.01
0
006aab679
10- 1
10- 3
10- 2
10- 1
FR4 PCB, mounting pad for cathode 1 cm2
1
10 102 103
tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102 duty cycle =
Zth(j-a)
(K/W)
10
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
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006aab680
0.02 0.01
1
0
10- 1
10- 3
10- 2
10- 1
Ceramic PCB, Al2O3, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
VF
Characteristics
Parameter
forward voltage
PMEG6020ETP
Product data sheet
Conditions
IF = 0.1 A; Tj = 25 °C
IF = 0.5 A; Tj = 25 °C
IF = 1 A; Tj = 25 °C
IF = 1.5 A; Tj = 25 °C
IF = 2 A; Tj = 25 °C
IF = 2 A; Tj = -40 °C
All information provided in this document is subject to legal disclaimers.
11 October 2012
Min
-
-
-
-
-
-
Typ Max Unit
300 340 mV
360 420 mV
400 460 mV
430 500 mV
460 530 mV
500 590 mV
© NXP B.V. 2012. All rights reserved
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