PMEG6010CEH Datasheet PDF - NXP Semiconductors

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PMEG6010CEH
NXP Semiconductors

Part Number PMEG6010CEH
Description 1 A very low VF MEGA Schottky barrier rectifiers
Page 10 Pages


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PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
Rev. 02 — 27 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small and flat lead
Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number
Package
NXP
PMEG6010CEH
SOD123F
PMEG6010CEJ
SOD323F
JEITA
-
SC-90
Configuration
single
single
1.2 Features
I Forward current: IF 1 A
I Reverse voltage: VR 60 V
I Very low forward voltage
I Small and flat lead SMD plastic packages
1.3 Applications
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I Low voltage rectification
I High efficiency DC-to-DC conversion
I Switch mode power supply
I Reverse polarity protection
I Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
IF
VR
VF
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Conditions
Tsp 55 °C
IF = 1 A
Min Typ Max Unit
- - 1A
- - 60 V
[1] - 570 660 mV
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NXP Semiconductors
PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
12
001aab540
Symbol
12
sym001
Table 4. Ordering information
Type number
Package
Name
Description
PMEG6010CEH -
plastic surface-mounted package; 2 leads
PMEG6010CEJ SC-90
plastic surface-mounted package; 2 leads
Version
SOD123F
SOD323F
4. Marking
Table 5. Marking codes
Type number
PMEG6010CEH
PMEG6010CEJ
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Marking code
CA
EQ
PMEG6010CEH_PMEG6010CEJ_2
Product data sheet
Rev. 02 — 27 March 2007
© NXP B.V. 2007. All rights reserved.
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NXP Semiconductors
PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR reverse voltage
IF forward current
Tsp 55 °C
IFRM
repetitive peak forward current tp 1 ms;
δ ≤ 0.25
-
-
-
IFSM non-repetitive peak forward square wave;
current
tp = 8 ms
PMEG6010CEH
-
PMEG6010CEJ
-
Ptot total power dissipation
PMEG6010CEH
Tamb 25 °C
[1] -
[2] -
PMEG6010CEJ
[1] -
[2] -
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
65
65
Max Unit
60 V
1A
7A
9A
10 A
375
830
350
830
150
+150
+150
mW
mW
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
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footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG6010CEH
Conditions
in free air
PMEG6010CEJ
Rth(j-sp)
thermal resistance from
junction to solder point
PMEG6010CEH
PMEG6010CEJ
Min Typ Max Unit
[1]
[2] - - 330 K/W
[3] - - 150 K/W
[2] - - 350 K/W
[3] - - 150 K/W
[4]
- - 60 K/W
- - 55 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Soldering point of cathode tab.
PMEG6010CEH_PMEG6010CEJ_2
Product data sheet
Rev. 02 — 27 March 2007
© NXP B.V. 2007. All rights reserved.
3 of 10
datasheet pdf - http://www.DataSheet4U.net/



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NXP Semiconductors
PMEG6010CEH; PMEG6010CEJ
1 A very low VF MEGA Schottky barrier rectifiers
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VF forward voltage
[1]
IF = 1 mA
- 210 250 mV
IF = 10 mA
- 270 310 mV
IF = 100 mA
- 350 400 mV
IF = 500 mA
- 460 530 mV
IF = 700 mA
- 510 580 mV
IF = 1 A
- 570 660 mV
IR
reverse current
VR = 5 V
- 0.8 - µA
VR = 10 V
- 1.1 - µA
VR = 60 V
- 11 50 µA
Cd
diode capacitance VR = 1 V; f = 1 MHz
-
60 68 pF
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
http://www.DataSheet4U.net/
PMEG6010CEH_PMEG6010CEJ_2
Product data sheet
Rev. 02 — 27 March 2007
© NXP B.V. 2007. All rights reserved.
4 of 10
datasheet pdf - http://www.DataSheet4U.net/



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Related : Start with PMEG6010CE Part Numbers by
PMEG6010CEH 1 A very low VF MEGA Schottky barrier rectifiers PMEG6010CEH
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PMEG6010CEH pdf
PMEG6010CEJ 1 A very low VF MEGA Schottky barrier rectifiers PMEG6010CEJ
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