PMEG3010BER Datasheet PDF - NXP

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PMEG3010BER
NXP

Part Number PMEG3010BER
Description 1A Low Vf MEGA Schottky Barrier Rectifier
Page 13 Pages


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PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 20 April 2009
Product data sheet
www.datasheet4u.com
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Average forward current: IF(AV) 1 A
I Reverse voltage: VR 30 V
I Low forward voltage
I High power capability due to clip-bond technology
I AEC-Q101 qualified
I Small and flat lead SMD plastic package
1.3 Applications
I Low voltage rectification
I High efficiency DC-to-DC conversion
I Switch Mode Power Supply (SMPS)
I Reverse polarity protection
I Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
Tamb 120 °C [1] - - 1
Tsp 140 °C
--1
VR reverse voltage
- - 30
VF forward voltage
IR reverse current
IF = 1 A
VR = 30 V
- 405 450
- 15 50
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Unit
A
A
V
mV
µA



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NXP Semiconductors
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
2. Pinning information
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Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
3. Ordering information
Simplified outline
[1]
12
Graphic symbol
12
sym001
Table 3. Ordering information
Type number
Package
Name
Description
PMEG3010BER -
plastic surface-mounted package; 2 leads
Version
SOD123W
4. Marking
Table 4. Marking codes
Type number
PMEG3010BER
Marking code
B8
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VR
IF(AV)
reverse voltage
average forward current
Tj = 25 °C
square wave;
δ = 0.5;
f = 20 kHz
-
IFSM
Ptot
non-repetitive peak
forward current
total power dissipation
Tamb 120 °C
Tsp 140 °C
square wave;
tp = 8 ms
Tamb 25 °C
[1] -
-
[2] -
[3][4] -
[3][5] -
[3][1] -
Max Unit
30 V
1A
1A
50 A
0.57 W
0.95 W
1.8 W
PMEG3010BER_1
Product data sheet
Rev. 01 — 20 April 2009
© NXP B.V. 2009. All rights reserved.
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NXP Semiconductors
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
w w w . d a t a s h e e t 4 u . c oSmymbol
Parameter
Conditions
Min
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
55
65
Max
150
+150
+150
Unit
°C
°C
°C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Tj = 25 °C prior to surge.
[3] Reflow soldering is the only recommended soldering method.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1][2]
[3] - - 220 K/W
[4] - - 130 K/W
[5] - - 70 K/W
[6] - - 18 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
PMEG3010BER_1
Product data sheet
Rev. 01 — 20 April 2009
© NXP B.V. 2009. All rights reserved.
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NXP Semiconductors
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
www.datashee1t043u.com
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
10 0.05
0.02 0.01
10
006aab362
101
103
102
101
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02 0.01
10
006aab363
101
103
102
101
1
10 102 103
tp (s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3010BER_1
Product data sheet
Rev. 01 — 20 April 2009
© NXP B.V. 2009. All rights reserved.
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