PMEG2010AEB Datasheet PDF - NXP Semiconductors

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PMEG2010AEB
NXP Semiconductors

Part Number PMEG2010AEB
Description 20 V/ 1 A ultra low VF MEGA Schottky barrier rectifier in SOD523 package
Page 8 Pages


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DISCRETE SEMICONDUCTORS
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DATA SHEET
M3D319
PMEG2010AEB
20 V, 1 A ultra low VF MEGA
Schottky barrier rectifier in
SOD523 package
Product specification
2003 Dec 03



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Philips Semiconductors
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
wPwrwo.dDuactat Sshpeeect4ifiUc.caotimon
PMEG2010AEB
FEATURES
Forward current: 1.0 A
Reverse voltage: 20 V
Ultra low forward voltage
Ultra small SMD package.
APPLICATIONS
Low voltage rectification
High efficiency DC/DC conversion
Voltage clamping
Inverse-polarity protection
Low power consumption applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
IF forward current
VR reverse voltage
MAX.
1
20
UNIT
A
V
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
12
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD523 (SC-79) ultra
small plastic SMD package.
Top view
col001
Marking code: L6.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523; SC-79) and
symbol.
ORDERING INFORMATION
TYPE NUMBER
PMEG2010AEB
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD523
RELATED PRODUCTS
TYPE
PMEG2005EB
PMEG2010EA
DESCRIPTION
FEATURE
0.5 A; 20 V very low VF MEGA Schottky rectifier Lower IR in same package
1 A; 20 V very low VF MEGA Schottky rectifier Lower forward current, lower IR SOD323
(SC76)
2003 Dec 03
2



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Philips Semiconductors
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
wwwPr.DodautacSthsepeetc4Uifi.ccaotmion
PMEG2010AEB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
Ts 55 °C
tp 1 ms; δ ≤ 0.5
t = 8 ms square wave
note 1
note 1
MIN.
65
65
MAX.
20
1.0
3.5
6
+150
150
+150
UNIT
V
A
A
A
°C
°C
°C
Note
1. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to
ambient
Rth(j-s)
thermal resistance from junction to
soldering point
CONDITIONS
in free air; notes 1 and 2
notes 2 and 3
VALUE
400
75
UNIT
K/W
K/W
Notes
1. Refer to SOD523 (SC-79) standard mounting conditions.
2. For Schottky barrier rectifiers, thermal run-away has to be considered, as in some applications the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
3. Solder point of cathode tab.
2003 Dec 03
3



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Philips Semiconductors
20 V, 1 A ultra low VF MEGA Schottky
barrier rectifier in SOD523 package
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
IR continuous reverse current
Cd diode capacitance
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
IF = 1000 mA
VR = 10 V; note 1
VR = 20 V; note 1
VR = 1 V; f = 1 MHz
wwwPr.DodautacSthsepeetc4Uifi.ccaotmion
PMEG2010AEB
TYP.
30
80
140
230
510
0.17
0.32
19
MAX.
60
110
190
290
620
0.6
1.5
25
UNIT
mV
mV
mV
mV
mV
mA
mA
pF
2003 Dec 03
4



PMEG2010AEB datasheet pdf
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