PMDPB30XN Datasheet PDF - NXP Semiconductors

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PMDPB30XN
NXP Semiconductors

Part Number PMDPB30XN
Description dual N-channel Trench MOSFET
Page 13 Pages


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PMDPB30XN
20 V, dual N-channel Trench MOSFET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Small brushless DC motor drive
Power management in battery-driven portables
Hard disc and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
Static characteristics (per transistor)
RDSon
drain-source on-state VGS = 4.5 V; ID = 3 A; Tj = 25 °C
resistance
Min Typ Max Unit
--
-12 -
[1] -
-
20 V
12 V
5.3 A
- 32 40 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMDPB30XN
20 V, dual N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 S1 source TR1
2 G1 gate TR1
3 D2 drain TR2
4 S2 source TR2
5 G2 gate TR2
6 D1 drain TR1
7 D1 drain TR1
8 D2 drain TR2
Simplified outline
654
Graphic symbol
D1
D2
78
123
Transparent top view
DFN2020-6 (SOT1118)
G1 S1
S2 G2
017aaa254
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMDPB30XN
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
Version
SOT1118
4. Marking
Table 4. Marking codes
Type number
PMDPB30XN
Marking code
1V
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
PMDPB30XN
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 July 2012
[1]
[1]
[1]
Min Max Unit
- 20 V
-12 12
V
- 5.3 A
- 4A
- 2.6 A
- 12 A
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
PMDPB30XN
20 V, dual N-channel Trench MOSFET
Symbol
Ptot
Parameter
total power dissipation
Source-drain diode
IS source current
Per device
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Conditions
Tamb = 25 °C
Tsp = 25 °C
Tamb = 25 °C
Min Max Unit
[2] -
490 mW
[1] -
1170 mW
- 8330 mW
[1] -
1.2 A
-55 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
120
017aaa123
120
017aaa124
Pder
(%)
Ider
(%)
80 80
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
PMDPB30XN
Product data sheet
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6 July 2012
© NXP B.V. 2012. All rights reserved
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NXP Semiconductors
PMDPB30XN
20 V, dual N-channel Trench MOSFET
102
ID
(A)
10
Limit RDSon = VDS/ID
1
DC; Tsp = 25 °C
10-1
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
017aaa637
tp = 10 µs
tp = 100 µs
tp = 10 ms
tp = 100 ms
10-2
10-1
IDM = single pulse
1
10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
in free air; t ≤ 5 s
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
[2] -
[2] -
-
223 256 K/W
93 107 K/W
55 63 K/W
10 15 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMDPB30XN
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
4 / 13



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