PFB2N60 Datasheet PDF - Pyramis Corporation

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PFB2N60
Pyramis Corporation

Part Number PFB2N60
Description N-Channel MOSFET
Page 7 Pages


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Pyramis Corporation
PFB2N60/PFF2N60
“The Silicon System Solutions Company”
Applications:
•Adaptor
•Charger
•SMPS Standby Power
•LCD Panel Power
Features:
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
N-Channel MOSFET
VDSS
600V
PRELIwMwIwN.DAatRaYSheet4U.com
RDS(ON) typical
3.7
ID
2.1 A
Ordering Information
PART NUMBER
PFB2N60
PFF2N60
PACKAGE
TO-220
TO-220F
BRAND
PFB2N60
PFF2N60
Absolute Maximum Ratings Tc=25 oC unless otherwise specified
Symbol
Parameter
GDS
TO-220
Not to Scale
PFB2N60
GDS
TO-220F
Not to Scale
PFF2N60
Units
VDSS
ID
ID@ 100 oC
IDM
PD
VGS
EAS
IAS
dv/dt
TL
TPKG
TJ and TSTG
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=38mH, ID=2.1 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
Maximum Soldering Lead Temperature
Max Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
(NOTE *1)
(NOTE *2)
(NOTE *3)
600
2.1 2.1*
Fig.ure 3
Figure 6
54 23
0.43 0.18
±30
84
Figure 8
3.0
300
260
-55 to 150
V
A
W
W/ oC
V
mJ
V/ ns
oC
* Drain current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the semiconductor device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case.
Junction-to-Ambient
PFB2N60 PFF2N60
2.3 5.5
62.5 62.5
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for a
peak junction temperature of +150 oC
1 cubic foot chamber, free air.
©2004 Pyramis Corp.
PFB2N60/PFF2N60 REV. C. May 2004



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OFF Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage
600 --
BVDSS/TJ
BreakdownVoltage Temperature
Coefficient, Figure 11.
-- 0.7
Max.
--
--
-- -- 25
IDSS Drain-to-Source Leakage Current
-- -- 250
IGSS
Gate-to-Source Forward Leakage
-- -- 100
Gate-to-Source Reverse Leakage
-- -- -100
PRELIMINARY
Units
V
V/ oC
µA
nA
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Test Conditions
VGS=0V, ID=250µA
Reference to 25 oC,
ID=250 µA
VDS=600 V,
TJ=25
VoCGS=
0
V
VDS=4T8J=01V2,5VoCGS= 0 V
VGS=+30 V
VGS= -30V
ON Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min.
RDS(ON)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
--
VGS(TH)
Gate Threshold Voltage, Figure 12.
2.0
gfs Forward Transconductance
--
Typ.
3.7
--
2.5
Max.
4.6
4.0
--
Units
V
S
Test Conditions
VGS=10V, ID=2.1A
(NOTE *4)
VDS=VGS, ID=250µA
VDS=15V, ID=2.1A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max.
Ciss Input Capacitance
-- 330 --
Coss Output Capacitance
-- 46 --
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
-- 9.0 --
-- 12.5 --
Qgs Gate-to-Source Charge
-- 2.2 --
Qgd
Gate-to-Drain (“Miller”) Charge
-- 6.0 --
Units
pF
nC
Test Conditions
VGS=0V, VDS=25V
f =1.0MHz
Figure 14
VDD=300V
ID=2.1A
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max.
Units
-- 13 --
-- 13 --
-- 34 --
ns
-- 26 --
Test Conditions
VDD=300V
ID=2.1A
VGS=10 V
RG=18
©2004 Pyramis Corp.
PFB2N60/PFF2N60 REV. C, May 2004
Page 2 of 7



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PRELIMINARY
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max.
IS
Continuous Source Current (Body Diode)
--
--
2.1
ISM
Maximum Pulsed Current (Body Diode) -- --
8.4
VSD Diode Forward Voltage
-- --
1.5
trr Reverse Recovery Time
-- 172
258
Qrr Reverse Recovery Charge
-- 0.75
1.13
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Units
Test Conditions
A Integral pn-diode
A in MOSFET
V IS=2.1A, VGS=0V
ns VGS=0V
µC IF=2.1A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +150 oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 2.1A di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 380µs; duty cycle < 2%.
©2004 Pyramis Corp.
PFB2N60/PFF2N60 REV. C, May 2004
Page 3 of 7



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Duty Cycle
1.000 50%
20%
10%
0.100 5%
2%
1%
0.010
single pulse
0.001
1E-05
PRELIMINARY
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
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1E-04
1E-03
1E-02
1E-01
tp, Rectangular Pulse Duration (s)
PDM
t1
t2
NOTES:
DUTY CYCLE: D=t1/t2
PEAK TJ=PDM x ZθJC x RθJC+TC
1E+00
1E+01
Figure 2. Maximum Power Dissipation
vs Case Temperature
60
50
40
30
20
10
0
25
50 75 100 125
TC, Case Temperature (oC)
150
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
2.5
2.0
1.5
1.0
0.5
0
25
50 75 100 125
TC, Case Temperature (oC)
150
Figure 4. Typical Output Characteristics
5 PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
4 TC = 25 oC
3
2
VGS = 15V
VGS = 6.0V
VGS = 5.5V
VGS = 5.25V
VGS = 5.0V
1
0
0
VGS = 4.5V
5 10 15 20
VDS, Drain-to-Source Voltage (V)
25
Figure 5. Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
10 PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
9 TC = 25 oC
8
7 ID = 2 A
ID = 1A
6
5
4
3
4 5 6 7 8 9 10 11 12 13 14 15
VGS, Gate-to-Source Voltage (V)
©2004 Pyramis Corp.
PFB2N60/PFF2N60 REV. C, May 2004
Page 4 of 7



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