PBSS4630PA Datasheet PDF - NXP


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PBSS4630PA
NXP

Part Number PBSS4630PA
Description 6 A NPN low VCEsat (BISS) transistor
Page 15 Pages

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PBSS4630PA
30 V, 6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 6 May 2010
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5630PA.
1.2 Features and benefits
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
„ Exposed heat sink for excellent thermal and electrical conductivity
„ Leadless small SMD plastic package with medium power capability
1.3 Applications
„ Loadswitch
„ Battery-driven devices
„ Power management
„ Charging circuits
„ Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
RCEsat
collector-emitter
saturation resistance
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 6 A;
IB = 300 mA
Min Typ Max Unit
- - 30 V
- - 6A
- - 7A
[1] -
35 46 mΩ



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PBSS4630PA
30 V, 6 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
12
Transparent top view
3
1
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
Version
PBSS4630PA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2 × 2 × 0.65 mm
4. Marking
Table 4. Marking codes
Type number
PBSS4630PA
Marking code
A7
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1] -
[2] -
[3] -
[4] -
Max Unit
30 V
30 V
6V
6A
7A
600 mA
500 mW
1W
1.4 W
2.1 W
PBSS4630PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4630PA
30 V, 6 A NPN low VCEsat (BISS) transistor
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
55
65
Max
150
+150
+150
Unit
°C
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
2.5
Ptot
(W)
2.0
(1)
006aab978
1.5 (2)
(3)
1.0
(4)
0.5
0.0
75
25
25
75
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
125 175
Tamb (°C)
6. Thermal characteristics
PBSS4630PA
Product data sheet
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 250 K/W
[2] - - 125 K/W
[3] - - 90 K/W
[4] - - 60 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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PBSS4630PA
30 V, 6 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab979
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab980
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4630PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 6 May 2010
© NXP B.V. 2010. All rights reserved.
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