PBSS4140U Datasheet PDF - NXP Semiconductors

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PBSS4140U
NXP Semiconductors

Part Number PBSS4140U
Description NPN transistor
Page 8 Pages


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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
PBSS4140U
40 V low VCEsat NPN transistor
Product data sheet
Supersedes data of 2001 Mar 27
2001 Jul 13



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NXP Semiconductors
40 V low VCEsat NPN transistor
Product data sheet
PBSS4140U
FEATURES
Low collector-emitter saturation voltage
High current capabilities.
Improved device reliability due to reduced heat
generation.
Enhanced performance over SOT231A general purpose
packaged transistors.
APPLICATIONS
General purpose switching and muting
LCD backlighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low VCEsat transistor in a SOT323 plastic package.
PNP complement: PBSS5140U.
MARKING
TYPE NUMBER
PBSS4140U
MARKING CODE
41t
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
ICM
RCEsat
collector-emitter voltage
peak collector current
equivalent on-resistance
MAX. UNIT
40 V
2A
<500 mΩ
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
1
Top view
1
2
MAM062
3
2
Fig.1 Simplified outline SOT323 and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Tamb 25 °C; note 2
MIN.
65
65
MAX.
40
40
5
1
2
1
250
350
+150
150
+150
UNIT
V
V
V
A
A
A
mW
mW
°C
°C
°C
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.
2001 Jul 13
2



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NXP Semiconductors
40 V low VCEsat NPN transistor
Product data sheet
PBSS4140U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
500
357
UNIT
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
ICEO
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
fT
Cc
PARAMETER
CONDITIONS
collector-base cut-off
current
collector-emitter cut-off
current
VCB = 40 V; IC = 0
VCB = 40 V; IC = 0; Tamb = 150 °C
VCE = 30 V; IB = 0
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation
voltage
VEB = 5 V; IC = 0
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 500 mA; IB = 50 mA; note 1
IC = 1 A; IB = 100 mA
base-emitter turn-on voltage VCE = 5 V; IC = 1 A
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
MIN.
300
300
200
150
TYP.
260
MAX. UNIT
100 nA
50 μA
100 nA
100
900
200
250
500
<500
1.2
nA
mV
mV
mV
mΩ
V
1.1 V
MHz
10 pF
Note
1. Pulse test: tp 300 μs; δ ≤ 0.02.
2001 Jul 13
3



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NXP Semiconductors
40 V low VCEsat NPN transistor
Product data sheet
PBSS4140U
1000
handbook, halfpage
hFE
800
600
400
200
MLD660
(1)
(2)
(3)
0101
1
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
10 102 103 104
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
10
handbook, halfpage
VBE
(V)
1
MLD656
(1)
(2)
(3)
101
101
1
VCE = 5 V.
(1) Tamb = 55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10 102 103 104
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
103
handbook, halfpage
VCEsat
(mV)
102
MLD657
(1)
102
handbook, halfpage
RCEsat
(Ω)
10
MLD658
(3)
(2)
10
1
1 10
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
102 103 104
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
(1) (2)
1
(3)
101101
1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = 55 °C.
10
102
103
104
IC (mA)
Fig.5 Equivalent on-resistance as a function of
collector current; typical values.
2001 Jul 13
4



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