PBSS4140DPN Datasheet PDF - NXP Semiconductors

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PBSS4140DPN
NXP Semiconductors

Part Number PBSS4140DPN
Description 40 V low VCEsat NPN/PNP transistor
Page 12 Pages


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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PBSS4140DPN
40 V low VCEsat NPN/PNP
transistor
Product specification
2001 Dec 13
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Philips Semiconductors
40 V low VCEsat NPN/PNP transistor
Product specification
PBSS4140DPN
FEATURES
600 mW total power dissipation
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation
Replaces two SOT23 packaged low VCEsat transistors
on same PCB area
Reduces required PCB area
Reduced pick and place costs.
APPLICATIONS
General purpose switching and muting
LCD backlighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457)
plastic package.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
TR1
collector-emitter voltage
peak collector current
peak collector current
NPN
TR2 PNP
RCEsat
equivalent on-resistance
MAX. UNIT
40 V
1A
2
<500
A
m
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
handbook, halfpag6e 5 4
65 4
TR2
TR1
MARKING
TYPE NUMBER
PBSS4140DPN
MARKING CODE
M2
12
Top view
3
MAM445
123
Fig.1 Simplified outline SC74 (SOT457) and
symbol.
2001 Dec 13
2
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Philips Semiconductors
40 V low VCEsat NPN/PNP transistor
Product specification
PBSS4140DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
Per device
Ptot total power dissipation
Tamb 25 °C; note 1
40 V
40 V
5V
1A
2A
1A
370 mW
65
+150
°C
150 °C
65
+150
°C
600 mW
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
VALUE
208
UNIT
K/W
Note
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2001 Dec 13
3
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Philips Semiconductors
40 V low VCEsat NPN/PNP transistor
Product specification
PBSS4140DPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO
ICEO
IEBO
hFE
VCEsat
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
VCB = 40 V; IE = 0
VCB = 40 V; IE = 0; Tj = 150 °C
VCE = 30 V; IB = 0
VEB = 5 V; IC = 0
VCE = 5 V; IC = 1 mA
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
−−
−−
−−
−−
300
−−
−−
−−
NPN transistor
hFE
VBEsat
VBEon
RCEsat
fT
Cc
DC current gain
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
collector capacitance
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
IC = 1 A; IB = 100 mA
VCE = 5 V; IC = 1 A
IC = 500 mA; IB = 50 mA; note 1
VCE =10 V; IC = 50 mA; f = 100 MHz
VCB = 10 V; IE = Ie = 0; f = 1 MHz
300
200
150
260
PNP transistor
hFE
VBEsat
VBEon
RCEsat
fT
DC current gain
base-emitter saturation voltage
base-emitter turn-on voltage
equivalent on-resistance
transition frequency
VCE = 5 V; IC = 100 mA
VCE = 5 V; IC = 500 mA
VCE = 5 V; IC = 1 A
IC = 1 A; IB = 50 mA
VCE = 5 V; IC = 1 A
IC = 500 mA; IB 50 mA; note 1
VCE = 10 V; IC = 50 mA;
f = 100 MHz
300
250
160
−−
−−
300
150
Cc collector capacitance
VCB = 10 V; IE = Ie = 0; f =1 MHz
100 nA
50 µA
100 nA
100 nA
200 mV
250 mV
500 mV
900
1.2
1.1
<500
10
V
V
m
MHz
pF
800
1.1
1.0
<500
V
V
m
MHz
12 pF
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
2001 Dec 13
4
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