PBLS4004D Datasheet PDF - NXP


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PBLS4004D
NXP

Part Number PBLS4004D
Description 40 V PNP BISS loadswitch
Page 15 Pages

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PBLS4004D
40 V PNP BISS loadswitch
Rev. 02 — 19 July 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
1.2 Features
s Low VCEsat (BISS) and resistor-equipped transistor in one package
s Low threshold voltage (< 1 V) compared to MOSFET
s Low drive power required
s Space-saving solution
s Reduction of component count
1.3 Applications
s Supply line switches
s Battery charger switches
s High-side switches for LEDs, drivers and backlights
s Portable equipment
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter
Conditions
TR1; PNP low VCEsat transistor
VCEO
collector-emitter voltage open base
IC collector current (DC)
RCEsat
collector-emitter saturation IC = 500 mA;
resistance
IB = 50 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
R1
collector-emitter voltage
output current
bias resistor 1 (input)
open base
R2/R1
bias resistor ratio
Min
-
[1] -
[2] -
-
-
15.4
0.8
Typ
-
-
240
-
-
22
1
Max
40
1
340
50
100
28.6
1.2
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp 300 µs; δ ≤ 0.02.
Unit
V
A
m
V
mA
k
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Philips Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Pinning
Description
emitter TR1
base TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
collector TR1
Simplified outline Symbol
654
65
4
123
R1
TR1
R2
TR2
12
3
sym036
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
PBLS4004D SC-74 plastic surface mounted package; 6 leads
Version
SOT457
4. Marking
Table 4: Marking codes
Type number
PBLS4004D
Marking code
R4
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
TR1; PNP low VCEsat transistor
VCBO
collector-base voltage
VCEO
collector-emitter voltage
VEBO
emitter-base voltage
IC collector current (DC)
open emitter
open base
open collector
-
-
-
[1] -
[2] -
[3] -
ICM peak collector current
IB base current (DC)
IBM peak base current
single pulse; tp 1 ms
single pulse; tp 1 ms
-
-
-
Max Unit
40
40
5
0.7
0.85
1
2
0.3
1
V
V
V
A
A
A
A
A
A
9397 750 15097
Product data sheet
Rev. 02— 19 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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Philips Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
Table 5: Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot total power dissipation Tamb 25 °C
[1] -
[2] -
[3] -
TR2; NPN resistor-equipped transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
open emitter
open base
open collector
-
-
-
-
negative
-
IO output current
ICM peak collector current
Ptot total power dissipation
Per device
single pulse; tp 1 ms
Tamb 25 °C
-
-
-
Ptot total power dissipation Tamb 25 °C
[1] -
[2] -
[3] -
Tstg
Tj
Tamb
storage temperature
junction temperature
ambient temperature
65
-
65
Max Unit
250 mW
350 mW
400 mW
50 V
50 V
10 V
+40 V
10 V
100 mA
100 mA
200 mW
400
530
600
+150
150
+150
mW
mW
mW
°C
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
9397 750 15097
Product data sheet
DataSheet4 U .com
Rev. 02— 19 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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Philips Semiconductors
PBLS4004D
40 V PNP BISS loadswitch
0.8
Ptot
(W)
0.6
(1)
(2)
(3)
0.4
006aaa461
0.2
0
0 40 80
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
120 160
Tamb (°C)
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Per TR1; PNP low VCEsat transistor
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] - - 312 K/W
[2] - - 236 K/W
[3] - - 210 K/W
- - 105 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
9397 750 15097
Product data sheet
DataSheet4 U .com
Rev. 02— 19 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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