PBHV9560Z Datasheet PDF - NXP Semiconductors

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PBHV9560Z
NXP Semiconductors

Part Number PBHV9560Z
Description 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Page 14 Pages


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PBHV9560Z
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
12 August 2014
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8560Z
2. Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC
High collector current gain hFE at high IC
AEC-Q101 qualified
3. Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
LCD backlighting
HID front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter
voltage
collector current
DC current gain
Conditions
open base
VCE = -10 V; IC = -50 mA; Tamb = 25 °C
Min Typ Max Unit
- - -600 V
- - -0.5 A
70 130 -
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NXP Semiconductors
PBHV9560Z
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 B base
2 C collector
3 E emitter
4 C collector
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
2, 4
1
3
sym028
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PBHV9560Z
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
7. Marking
Table 4. Marking codes
Type number
PBHV9560Z
Marking code
HV956Z
PBHV9560Z
Product data sheet
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12 August 2014
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NXP Semiconductors
PBHV9560Z
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VCESM
collector-emitter peak voltage VBE = 0 V
VEBO
emitter-base voltage
open collector
IC collector current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
Min Max Unit
- -600 V
- -600 V
- -600 V
- -6 V
- -0.5 A
[1] -
0.65 W
[2] -
1.4 W
- 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
1.6
Ptot
(W)
1.2
(1)
aaa-013702
0.8
(2)
0.4
0
-60 20
Fig. 1.
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Power derating curves
100 180
Tamb (°C)
PBHV9560Z
Product data sheet
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NXP Semiconductors
PBHV9560Z
600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] - - 190 K/W
[2] - - 89 K/W
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
103
Zth(j-a)
(K/W) duty cycle = 1
102 0.75
0.33
0.1
10
0.5
0.2
0.05
0.02 0.01
10
aaa-013426
10-1
10-5
10-4
10-3
10-2
10-1
1
FR4 PCB, single-sided copper, tin-plated and standard footprint.
10 102 103
tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
Zth(j-a)
(K/W)
10
0.75
0.33
0.1
duty cycle = 1
0.5
0.2
0.05
aaa-013427
0.02 0.01
1
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV9560Z
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
12 August 2014
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