P3NB60FP Datasheet PDF - ST Microelectronics

www.Datasheet-PDF.com

P3NB60FP
ST Microelectronics

Part Number P3NB60FP
Description STP3NB60
Page 9 Pages


P3NB60FP datasheet pdf
Download PDF
P3NB60FP pdf
View PDF for Mobile

No Preview Available !

t4U.com STP3NB60
ee STP3NB60FP
Sh N - CHANNEL ENHANCEMENT MODE
ata PowerMESHMOSFET
w.DTYPE
w STP3NB60
w STP3NB60FP
VDSS
600 V
600 V
RDS(on)
<3.6
< 3.6
ID
3.3 A
2.2 A
s TYPICAL RDS(on) = 3.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms VERY LOW INTRINSIC CAPACITANCES
os GATE CHARGE MINIMIZED
.cDESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
Uadvanced family of power MOSFETs with
t4outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
elowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
eand switching characteristics.
hAPPLICATIONS
Ss HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
tas DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
aPOWER SUPPLIES AND MOTOR DRIVE
.DABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS
wVDGR
wVGS
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP3NB60 STP3NB60FP
600
600
± 30
Unit
V
V
V
ID
ID
IDM()
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
March 1998
3.3 2.2
m2.1 1.4
o13.2
13.2
.c80 35
U0.64
0.28
t44.5 4.5
ee2000
h-65 to 150
www.DataS150
A
A
A
W
W/oC
V/ns
V
oC
oC
1/9



No Preview Available !

STP3NB60/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.56
TO220-FP
3.57
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
3.3
100
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 1.6 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
3.3 3.6
3.3 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 1.6 A
Min.
1.2
Typ.
2
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
400 520
57 77
79
pF
pF
pF
2/9



No Preview Available !

STP3NB60/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 1.6 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 3.3 A VGS = 10 V
Min.
Typ.
11
7
15
6.2
5.6
Max.
17
11
22
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 3.3 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
11
13
18
Max.
16
18
25
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 3.3 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 3.3 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
3.3
13.2
Unit
A
A
1.6
500
2.1
8.5
V
ns
µC
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9



No Preview Available !

STP3NB60/FP
Thermal Impedance for TO-220
Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9



P3NB60FP datasheet pdf
Download PDF
P3NB60FP pdf
View PDF for Mobile


Related : Start with P3NB60F Part Numbers by
P3NB60FP STP3NB60 P3NB60FP
ST Microelectronics
P3NB60FP pdf
P3NB60FP STP3NB60FP P3NB60FP
ST Microelectronics
P3NB60FP pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact