P13NK60ZFP Datasheet PDF - STMicroelectronics

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P13NK60ZFP
STMicroelectronics

Part Number P13NK60ZFP
Description STP13NK60ZFP
Page 17 Pages


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STB13NK60Z - STB13NK60Z-1
STP13NK60Z/FP - STW13NK60Z
N-CHANNEL 600V - 0.48- 13A - TO-220/FP - D²/I²PAK - TO-247
Zener-Protected SuperMESH™ MOSFET
General features
Type
VDSS RDS(on)
STB13NK60Z-1
STB13NK60Z
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
600 V
600 V
600 V
600 V
600 V
<0.55
<0.55
<0.55
<0.55
<0.55
ID
13 A
13 A
13 A
13 A
13 A
Pw
150 W
150 W
35 W
150 W
150 W
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEABILITY
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Applications
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES
DC-AC CONVERTERS FOR WELDING, UPS
AND MOTOR DRIVE
Order codes
Package
3
2
1
TO-220
3
2
1
TO-220FP
123
I²PAK
3
2
1
TO-247
3
1
D²PAK
Internal schematic diagram
Sales Type
STB13NK60Z-1
STB13NK60ZT4
STP13NK60ZFP
STP13NK60Z
STW13NK60Z
September 2005
Marking
B13NK60Z-1
B13NK60Z
P13NK60ZFP
P13NK60Z
W13NK60Z
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
TUBE
TAPE & REEL
TUBE
TUBE
TUBE
Rev 2
1/17
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www.DataS1hEeelet4cUtr.iccoaml ratings
STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-Source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20k)
VGS Gate-Source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM Note 2 Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt Note 3 Peak Diode Recovery voltage slope
VISO
Insulation Withstand Volatge (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
Value
TO-220 / TO-247
I²PAK / D²PAK
TO-220FP
13
8.2
52
150
1.20
--
600
600
± 30
4000
4.5
13 (Note 1)
8.2 (Note 1)
52 (Note 1)
35
0.27
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
Table 2. Thermal data
Rthj-case
Rthj-pcb
Note 7
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220
I²PAK / TO-247
D²PAK
0.83
-- 60
62.5
300
TO-220FP Unit
3.6 °C/W
-- °C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy
EAS (starting Tj=25°C, ID=IAR, VDD= 50V)
Max Value
10
400
Unit
A
mJ
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www.DataSShTeeBt41U3.cNomK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z 2 Electrical characteristics
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate Body Leakage Current
(VDS = 0)
Gate Threshold Voltage
Static Drain-Source On
Resistance
Test Conditions
ID = 1 mA, VGS= 0
VDS = Max Rating,
VDS = Max Rating,Tc=125°C
VGS = ±20 V
VDS= VGS, ID = 100 µA
VGS= 10 V, ID= 4.5 A
Min.
600
3
Typ.
3.75
0.48
Max.
1
50
±10
4.5
0.55
Unit
V
µA
µA
µA
V
Table 5. Dynamic
Symbol
Parameter
Test Conditions
gfs Note 4
Ciss
Coss
Crss
Coss eq.
Note 5
Qg
Qgs
Qgd
Forward Transconductance VDS =8V, ID = 5 A
Input Capacitance
Output Capacitance
VDS =25V, f=1 MHz, VGS=0
Reverse Transfer Capacitance
Equivalent Ouput Capacitance VGS=0, VDS =0V to 480V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=480V, ID = 10A
VGS =10V
(see Figure 19)
Min.
Typ.
11
2030
210
48
Max.
Unit
S
pF
pF
pF
125 pF
66 92 nC
11 nC
33 nC
Table 6. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
tr(Voff)
tf
tc
Turn-off Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=300 V, ID= 5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=300 V, ID= 5A,
RG=4.7Ω, VGS=10V
(see Figure 20)
VDD=480 V, ID= 10A,
RG=4.7Ω, VGS=10V
(see Figure 20)
Min. Typ. Max. Unit
22 ns
14 ns
61 ns
12 ns
10 ns
9 ns
20 ns
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www.DataS2hEeelet4cUtr.iccoaml characteristics
STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
Table 7. Gate-source zener diode
Symbol
Parameter
BVGSO
Note 6
Gate-Source Breakdown
Voltage
Test Conditions
Igs=±1mA
(Open Drain)
Min.
30
Table 8. Source drain diode
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDMNote 2 Source-drain Current (pulsed)
VSDNote 4 Forward on Voltage
ISD = 10 A, VGS=0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD= 10A, di/dt = 100A/µs,
VDD=35 V, Tj=150°C
Min.
Typ.
Max. Unit
V
Typ.
570
4.5
16
Max.
10
40
1.6
Unit
A
A
V
ns
µC
A
(1) Limited only by maximum temperature allowed
(2) Pulse width limited by safe operating area
(3) ISD 13A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80%
(6) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,
but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In
this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
(7) When mounted on minimum Footprint
4/17



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