P011XX Datasheet PDF - ST Microelectronics


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P011XX
ST Microelectronics

Part Number P011XX
Description Sensitive Gate SCRs
Page 9 Pages

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P011xx
Sensitive high immunity SCRs up to 0.8 A
Features
IT(RMS) up to 0.8 A
VDRM/VRRM 400 and 600 V
IGT from 0.5 to 25 µA
Description
Thanks to highly sensitive triggering levels, the
P011xx SCR series is suitable for all applications
where available gate current is limited, such as
ground fault circuit interruptors, pilot circuits in
solid state relays, standby mode power supplies,
smoke and alarm detectors.
Available in through-hole or surface-mount
packages, the voltage capability of this series has
been upgraded since its introduction and is now
available up to 600 V.
Table 1. Device summary
Order code
Voltage
400 V
600 V
P0111DA 1AA3
P0111DA 5AL3
P0111DN 5AA4
P0111MA 1AA3
P0111MA2AL3(1)
P0111MN 5AA4
P0115DA 1AA3
P0115DA 5AL3
P0118DA 1AA3
P0118DA 5AL3
P0118DN 5AA4
P0118MA 2AL3
P0118MA 5AL3
X
X
X
X
X
X
X
X
X
X
X
X
X
1. This order code has no space.
A
G
K
KGA
TO-92
(P011xxA)
Sensitivity
Min.
4 µA
4 µA
4 µA
4 µA
4 µA
4 µA
15 µA
15 µA
0.5 µA
0.5 µA
0.5 µA
0.5 µA
0.5 µA
Max.
25 µA
25 µA
25 µA
25 µA
25 µA
25 µA
50 µA
50 µA
5 µA
5 µA
5 µA
5 µA
5 µA
A
KAG
SOT-223
(P011xxN)
Package
TO-92
TO-92
SOT-223
TO-92
TO-92
SOT-223
TO-92
TO-92
TO-92
TO-92
SOT-223
TO-92
TO-92
January 2009
Rev 1
1/9
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1 Characteristics
P011xx
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
RMS on-state current (180° conduction angle)
TO-92
SOT-223
TO-92
Average on-state current (180° conduction angle)
SOT-223
Non repetitive surge peak on-state current
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tl = 55 °C
Tamb = 70 °C
Tl = 55 °C
Tamb = 70 °C
Tj = 25 °C
Tj = 25 °C
0.8
0.5
8
7
0.24
Tj = 125 °C
50
Tj = 125 °C
Tj = 125 °C
1
0.1
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
P0111 P0115
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V RL = 140 Ω
VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ
IRG = 10 µA
IT = 50 mA RGK = 1 kΩ
IG = 1 mA RGK = 1 kΩ
VD = 67 % VDRM RGK = 1 kΩ
ITM = 1.6 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM = 400 V
VDRM = VRRM = 600 V
VDRM = VRRM
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Min.
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Tj = 25 °C
Tj = 125 °C
Max.
4
25
80
15
50
0.8
0.1
8
5
6
75
1.95
0.95
600
1
10
100
P0118
0.5
5
75
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
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Characteristics
Table 4. Thermal resistance
Symbol
Rth(j-a) Junction to case (DC)
Rth(j-t) Junction to tab (DC)
Rth(j-a) Junction to ambient (DC)
1. S = Copper surface under tab.
Parameter
Maximum
TO-92
80
SOT-223
TO-92
S(1) = 5 cm2 SOT-223
30
150
60
Unit
°C/W
°C/W
°C/W
Figure 1.
Maximum average power
Figure 2.
dissipation versus average on-state
current
Average and DC on-state current
versus lead temperature
P(W)
1.0
0.9 α = 180°
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
IT(AV)(A)
0.2 0.3
0.4
360°
α
0.5 0.6
IT(AV)(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
D.C. (SOT-223)
D.C. (TO-92)
α = 180° (SOT-223)
α = 180° (TO-92)
Tlead(°C)
25 50 75
100
125
Figure 3. Average and DC on-state current
versus ambient temperature
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
IT(AV)(A)
1.2
1.1
D.C. (SOT-223)
1.0
Device mounted on FR4 with
recommended pad layout
0.9
0.8
0.7 D.C. (TO-92)
0.6
0.5
α = 180° (SOT-223)
0.4
0.3 α = 180° (TO-92)
0.2
0.1 Tamb(°C)
0.0
0 25 50 75 100
125
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
SOT-223
TO-92
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
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P011xx
Figure 5.
Relative variation of gate trigger, Figure 6.
holding and latching current versus
junction temperature
Relative variation of holding
current versus gate-cathode
resistance (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
6
5
4
3
IGT
2
1 IH & IL
RGK = 1kΩ
Tj(°C)
0
-40 -20 0 20 40 60
typical values
80 100 120 140
IH[RGK] / IH[RGK=1kΩ]
20
18
16
14
12
10
8
6
4
2
0
1E-2
RGK(kΩ)
1E-1
1E+0
Tj = 25°C
1E+1
Figure 7.
Relative variation of dV/dt immunity Figure 8.
versus gate-cathode resistance
(typical values).
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
dV/dt[RGK] / dV/dt[RGK=1kΩ]
10.0
Tj = 125°C
VD = 0.67 x VDRM
dV/dt[CGK] / dV/dt[RGK=1kΩ]
10
VD = 0.67 x VDRM
Tj = 125°C
RGK = 1kΩ
8
6
1.0
4
0.1
0
RGK(kΩ)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
2
CGK(nF)
0
01234567
Figure 9.
Surge peak on-state current versus Figure 10. Non-repetitive surge peak on-state
number of cycles
current and corresponding value
of I²t
ITSM(A)
8
7
6
5
4
3
2
1
0
1
Repetitive
Tamb=25°C
Non repetitive
Tj initial=25°C
Number of cycles
10 100
tp=10ms
One cycle
1000
ITSM(A), I2t (A2s)
100.0
sinusoidal pulse with
10.0 width tp < 10ms
Tj initial = 25°C
ITSM
1.0
0.1
0.01
tp(ms)
0.10
1.00
I2t
10.00
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